| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology |
| ZHOU Dai-Bing, WANG Hui-Tao, ZHANG Rui-Kang, WANG Bao-Jun, BIAN Jing, AN Xin, LU Dan, ZHAO Ling-Juan**, ZHU Hong-Liang, JI Chen, WANG Wei |
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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ZHOU Dai-Bing, WANG Hui-Tao, ZHANG Rui-Kang et al 2015 Chin. Phys. Lett. 32 054205 |
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Abstract A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13 mA. The output power exceeds 10 mW at 0 V bias when the injection current of the distributed feedback laser is 100 mA at 25°C. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.5Vpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.
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Received: 16 January 2015
Published: 01 June 2015
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| PACS: |
42.30.Lr
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(Modulation and optical transfer functions)
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42.55.Px
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(Semiconductor lasers; laser diodes)
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42.79.Hp
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(Optical processors, correlators, and modulators)
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42.82.Bq
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(Design and performance testing of integrated-optical systems)
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