Chin. Phys. Lett.  2015, Vol. 32 Issue (4): 047301    DOI: 10.1088/0256-307X/32/4/047301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator
SU Li-Na1,2, LV Li2, LI Xin-Xing2, QIN Hua2, GU Xiao-Feng1**
1Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122
2Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123
Cite this article:   
SU Li-Na, LV Li, LI Xin-Xing et al  2015 Chin. Phys. Lett. 32 047301
Download: PDF(757KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nanolithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50 nm in diameter is demonstrated to operate at temperatures up to 70 K. The charging energy of the Coulomb island is about 12.5 meV.
Received: 25 November 2014      Published: 30 April 2015
PACS:  73.63.-b (Electronic transport in nanoscale materials and structures)  
  73.43.Jn (Tunneling)  
  73.63.Kv (Quantum dots)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/32/4/047301       OR      https://cpl.iphy.ac.cn/Y2015/V32/I4/047301
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
SU Li-Na
LV Li
LI Xin-Xing
QIN Hua
GU Xiao-Feng
[1] Zwanenburg F A, Dzurak A S, Hollenberg L C L, Klimeck G, Rogge S, Coppersmith S N and Eriksson M A 2013 Rev. Mod. Phys. 85 961
[2] Huang R, Song J, Guo Y Q, Wang X, Chen K J and Li W 2011 Acta Phys. Sin. 60 027301 (in Chinese)
[3] Guo L, Leobandung E and Chou S Y 1997 Science 275 649
[4] Devoret M H and Schoelkopf R J 2000 Nature 406 1039
[5] Suter K, Akiyama T, de Rooij N F, Huefner M, Ihn T and Staufer U 2010 J. Microelectromech. Syst. 19 1088
[6] Yoo M J, Fulton T A, Hess H F, Willett R L, Dunkleberger L N, Chichester R J, Pfeiffer L N and West K W 1997 Science 276 579
[7] Schoelkopf R J, Wahlgren P, Kozhevnikov A A, Delsing P and Prober D E 1998 Science 280 1238
[8] Phillips A H, Aly N A I, Kirah K and El-Sayes H E 2008 Chin. Phys. Lett. 25 250
[9] Fulton T and Dolan G 1987 Phys. Rev. Lett. 59 109
[10] Huang J, Chen K J, Fang Z H, Guo S H, Wang X, Ding H L, Li W and Huang X F 2009 Chin. Phys. Lett. 26 037301
[11] Ponomarenko L A, Schedin F, Katsnelson M I, Yang R, Hill E W, Novoselov K S and Geim A K 2008 Science 320 356
[12] Koppinen P J, Stewart M D and Zimmerman N M 2013 IEEE Trans. Electron Devices 60 78
[13] Fujiwara A, Inokawa H, Yamazaki K, Namatsu H, Takahashi Y, Zimmerman N M and Martin S B 2006 Appl. Phys. Lett. 88 053121
[14] Zimmerman N M, Simonds B J, Fujiwara A, Ono Y, Takahashi Y and Inokawa H 2007 Appl. Phys. Lett. 90 033507
Related articles from Frontiers Journals
[1] Yeliang Wang. Orbit-Transfer Torque Switching[J]. Chin. Phys. Lett., 2022, 39(7): 047301
[2] Dong Pan, Huading Song, Shan Zhang, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Zhichuan Wang, Zitong Zhang, Shuai Yang, Jianghua Ying, Wentao Miao, Runan Shang, Hao Zhang, and Jianhua Zhao. In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices[J]. Chin. Phys. Lett., 2022, 39(5): 047301
[3] Xing-Guo Ye, Peng-Fei Zhu, Wen-Zheng Xu, Nianze Shang, Kaihui Liu, and Zhi-Min Liao. Orbit-Transfer Torque Driven Field-Free Switching of Perpendicular Magnetization[J]. Chin. Phys. Lett., 2022, 39(3): 047301
[4] Yawen Guo, Wenqi Jiang, Xinru Wang, Fei Wan, Guanqing Wang, G. H. Zhou, Z. B. Siu, Mansoor B. A. Jalil, and Yuan Li. Effect of Geometrical Structure on Transport Properties of Silicene Nanoconstrictions[J]. Chin. Phys. Lett., 2021, 38(12): 047301
[5] Fan Gao and Yongqing Li. Influence of Device Geometry on Transport Properties of Topological Insulator Microflakes[J]. Chin. Phys. Lett., 2021, 38(11): 047301
[6] Linwei Zhou, Chen-Guang Wang, Zhixin Hu, Xianghua Kong, Zhong-Yi Lu, Hong Guo, and Wei Ji. Quasi-One-Dimensional Free-Electron-Like States Selected by Intermolecular Hydrogen Bonds at the Glycine/Cu(100) Interface[J]. Chin. Phys. Lett., 2020, 37(11): 047301
[7] Yi-Fan He , Lei-Xi Wang , Zhi-Xing Xiao , Ya-Wei Lv, Lei Liao , and Chang-Zhong Jiang . Normal Strain-Induced Tunneling Behavior Promotion in van der Waals Heterostructures[J]. Chin. Phys. Lett., 2020, 37(8): 047301
[8] Lu-Lu Yang, Jun-Jie Shi, Min Zhang, Zhong-Ming Wei, Yi-Min Ding, Meng Wu, Yong He, Yu-Lang Cen, Wen-Hui Guo, Shu-Hang Pan, Yao-Hui Zhu. The 2D InSe/WS$_2$ Heterostructure with Enhanced Optoelectronic Performance in the Visible Region[J]. Chin. Phys. Lett., 2019, 36(9): 047301
[9] Gufeng Fu, Fang Cheng. Anisotropic Transport on Monolayer and Multilayer Phosphorene in the Presence of an Electric Field[J]. Chin. Phys. Lett., 2019, 36(5): 047301
[10] Ze-Long He, Qiang Li, Kong-Fa Chen, Ji-Yuan Bai, Sui-Hu Dang. Fano Effect and Anti-Resonance Band in a Parallel-Coupled Double Quantum Dot System with Two Multi-Quantum Dot Chains[J]. Chin. Phys. Lett., 2018, 35(9): 047301
[11] Chu-Hong Yang, Shu-Yu Zheng, Jie Fan, Xiu-Nian Jing, Zhong-Qing Ji, Guang-Tong Liu, Chang-Li Yang, Li Lu. Transport Studies on GaAs/AlGaAs Two-Dimensional Electron Systems Modulated by Triangular Array of Antidots[J]. Chin. Phys. Lett., 2018, 35(7): 047301
[12] Hong-Jun Wang, Yuan-Yuan Zhu, Jing Zhou, Yong Liu. Electrical Conductivity of a Single Electro-deposited CoZn Nanowire[J]. Chin. Phys. Lett., 2018, 35(7): 047301
[13] Ze-Long He, Ji-Yuan Bai, Shu-Jiang Ye, Li Li, Chun-Xia Li. Quantum Switch and Efficient Spin-Filter in a System Consisting of Multiple Three-Quantum-Dot Rings[J]. Chin. Phys. Lett., 2017, 34(8): 047301
[14] Li-Ling Zhou, Xue-Yun Zhou, Rong Cheng, Cui-Ling Hou, Hong Shen. Local Heating in a Normal-Metal–Quantum-Dot–Superconductor System without Electric Voltage Bias[J]. Chin. Phys. Lett., 2017, 34(6): 047301
[15] Shi-Li Yan, Zhi-Jian Xie, Jian-Hao Chen, Takashi Taniguchi, Kenji Watanabe. Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors[J]. Chin. Phys. Lett., 2017, 34(4): 047301
Viewed
Full text


Abstract