| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Low-Temperature Deposition of nc-SiOx:H below 400°C Using Magnetron Sputtering |
| LI Yun, YIN Chen-Chen, JI Yun, SHI Zhen-Liang, JIN Cong-Hui, YU Wei**, LI Xiao-Wei** |
Hebei Key Laboratory of Optic-Electronic Information Materials, College of Physics Science and Technology, Hebei University, Baoding 071002
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| Cite this article: |
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LI Yun, YIN Chen-Chen, JI Yun et al 2015 Chin. Phys. Lett. 32 046802 |
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Abstract Silicon oxide films containing nanocrystalline silicon (nc-SiOx:H) are deposited by co-sputtering technology at low temperatures (<400°C) that are much lower than the typical growth temperature of nc-Si in SiO2. The microstructures and bonding properties are characterized by Raman and FTIR. It is proven that an optimum range of substrate temperatures for the deposition of nc-SiOx:H films is 200–400°C, in which the ratio of transition crystalline silicon decreases, the crystalline fraction is higher, and the hydrogen content is lower. The underlying mechanism is explained by a competitive process between nc-Si Wolmer–Weber growth and oxidation reaction, both of which achieve a balance in the range of 200–400°C. We further implement this technique in the fabrication of multilayered nc-SiOx:H/a-SiOx:H films, which exhibit controllable nc-Si sizes with high crystallization quality.
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Received: 12 October 2014
Published: 30 April 2015
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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61.82.Rx
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(Nanocrystalline materials)
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