| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Diode-Pumped c-Cut Nd:Lu0.99La0.01VO4 Self-Stimulated Raman Laser at 1181 nm |
| CAI Wei-Yang1, DUAN Yan-Min1**, LI Jiang-Tao1, YAN Lin-Fei1, MAO Meng-Jiao1, ZHAO Bin2, ZHU Hai-Yong1 |
1College of Physics and Electronic Information, Wenzhou University, Wenzhou 325035
2College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108
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| Cite this article: |
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CAI Wei-Yang, DUAN Yan-Min, LI Jiang-Tao et al 2015 Chin. Phys. Lett. 32 034206 |
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Abstract The self-stimulated Raman laser operation of a Nd:Lu0.99La0.01VO4 new crystal is presented. A 0.3 at.% Nd doped Lu0.99La0.01VO4 crystal in dimensions 3×3×20 mm3 is adopted as the self-stimulated Raman crystal. At a pulse repetition frequency of 14 kHz, average output powers of 240 mW for the first Stokes light at 1181 nm and 660 mW for the fundamental light at 1068 nm are obtained under an incident pump power of 5.5 W. The pulse widths of the first Stokes light and fundamental light are about 15 and 25 ns. The slope efficiencies are about 12.7% and 18.8% with respect to the incident pump power.
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Published: 26 February 2015
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| PACS: |
42.55.Ye
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(Raman lasers)
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42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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42.55.Xi
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(Diode-pumped lasers)
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