Chin. Phys. Lett.  2015, Vol. 32 Issue (02): 027402    DOI: 10.1088/0256-307X/32/2/027402
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Magneto-Transport Properties of Insulating Bulk States in Bi(111) Films
PANG Fei**
Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872
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PANG Fei 2015 Chin. Phys. Lett. 32 027402
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Abstract Magneto-transport properties of insulating bulk states in Bi(111) films are systematically investigated under the parallel field (B||). We find that the magnetotransport of the B|| field is a more powerful tool to distinguish the bulk states and the surface states. A large magnetoresistance (MR) up to 20% in the B|| field is induced by the insulating bulk states for the suppression of the backward scattering. With the increasing thickness, a positive MR(B||) from magnetic induced boundary scattering appears in the semimetal films. As the thickness is reduced to 10 nm, the positive MR(B||) is induced by weak anti-localization from the surface states.
Published: 20 January 2015
PACS:  74.25.F- (Transport properties)  
  71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)  
  72.15.Rn (Localization effects (Anderson or weak localization))  
  73.20.-r (Electron states at surfaces and interfaces)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/2/027402       OR      https://cpl.iphy.ac.cn/Y2015/V32/I02/027402
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PANG Fei
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