| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050 mA/mm |
| LI Xiang-Dong, ZHANG Jin-Cheng**, GUO Zhen-Xing, JIANG Hai-Qing, ZOU Yu, ZHANG Wei-Hang, HE Yun-Long, JIANG Ren-Yuan, ZHAO Sheng-Lei, HAO Yue |
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
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| Cite this article: |
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LI Xiang-Dong, ZHANG Jin-Cheng, GUO Zhen-Xing et al 2015 Chin. Phys. Lett. 32 117202 |
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Abstract We report Al0.30Ga0.70N/GaN/Al0.07Ga0.93N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm. By optimizing the graded buffer layer and the GaN channel thickness, both the crystal quality and the device performance are improved significantly, including electron mobility promoted from 1535 to 1602 cm2/V?s, sheet carrier density improved from 0.87×1013 to 1.15×1013 cm?2, edge dislocation density reduced from 2.4×109 to 1.3×109 cm?2, saturation drain current promoted from 757 to record 1050 mA/mm, mesa leakage reduced by two orders in magnitude, and breakdown voltage promoted from 72 to 108 V.
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Received: 07 July 2015
Published: 01 December 2015
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| PACS: |
72.80.Ey
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(III-V and II-VI semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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