| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Characterization of Interface Charge in NbAlO/AlGaN/GaN MOSHEMT with Different NbAlO Thicknesses |
| FENG Qian1,2**, DU Kai1,2, DAI Bo1,2, DONG Liang1,2, FENG Qing1,2 |
1School of Microelectronics, Xidian University, Xi'an 710071
2Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
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| Cite this article: |
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FENG Qian, DU Kai, DAI Bo et al 2015 Chin. Phys. Lett. 32 017301 |
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Abstract We investigate the influence of interface charge on electrical performance of NbAlO/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). Through C–V measurements and simulations, we find that the donor-type interface fixed charge density Qit of 2.2×1013 cm?2 exists at the NbAlO/AlGaN interface, which induces the shift of the threshold voltage much more negative. Furthermore, a trap density of approximately 0.43×1013–1.14×1013 cm?2eV?1 is obtained at the NaAlO/AlGaN interface, which is consistent with the frequency-dependent capacitance and conductance measurement results.
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Published: 23 December 2014
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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