| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching |
| WANG Qiang1,2, JI Zi-Wu1**, XIAO Hong-Di1, LV Hai-Yan1, LI Jian-Fei1, XU Xian-Gang3, LV Yuan-Jie4, FENG Zhi-Hong4 |
1School of Physics, Shandong University, Jinan 25010
2School of Science, Qilu University of Technology, Jinan 250353
3State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100
4Science and Technology on Application Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051
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| Cite this article: |
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WANG Qiang, JI Zi-Wu, XIAO Hong-Di et al 2014 Chin. Phys. Lett. 31 088103 |
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Abstract Nanoporous (NP) GaN is prepared by electrochemical etching on a GaN epilayer grown on a sapphire substrate by metal-organic chemical vapor deposition. Scanning electron microscopy reveals that the average pore diameter and inter-pore spacing are approximately 25 and 45 nm, respectively. The photoluminescence (PL) spectra show that in contrast to the initial as-grown GaN epilayer, the NP GaN exhibits a high near-band-edge UV intensity, significant relaxation of compressive strain, and a lower yellow luminescence intensity. Both the line shape and line width of the PL spectra are almost the same for these two samples. The high quality of the NP GaN can be explained by the enhancement of the PL extraction efficiency and the decrease of impurity and defect density after etching.
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| PACS: |
81.65.Cf
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(Surface cleaning, etching, patterning)
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71.55.Eq
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(III-V semiconductors)
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61.72.Hh
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(Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))
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