| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes |
| KANG He1, WANG Quan1, XIAO Hong-Ling1, WANG Cui-Mei1, JIANG Li-Juan1, FENG Chun1, CHEN Hong1, YIN Hai-Bo1, WANG Xiao-Liang1,2,3**, WANG Zhan-Guo1,2, HOU Xun3 |
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Beijing 100083
3ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083
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| Cite this article: |
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KANG He, WANG Quan, XIAO Hong-Ling et al 2014 Chin. Phys. Lett. 31 068502 |
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Abstract Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20 nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high VBR2/RON,sp value of 194 MW?cm?2.
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Published: 26 May 2014
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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73.61.Ey
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(III-V semiconductors)
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