| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD |
| JIANG Xian-Zhe1, YANG Xue-Lin 1**, JI Cheng1, XING Hai-Ying2, YANG Zhi-Jian1, WANG Cun-Da1, YU Tong-Jun1**, ZHANG Guo-Yi1 |
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
2School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387
|
|
| Cite this article: |
|
JIANG Xian-Zhe, YANG Xue-Lin, JI Cheng et al 2014 Chin. Phys. Lett. 31 067501 |
|
|
|
|
Abstract GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on VGa related defects are observed from photoluminescence measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different (n-type GaN and p-type GaN) templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.
|
|
|
Published: 26 May 2014
|
|
| PACS: |
75.70.-i
|
(Magnetic properties of thin films, surfaces, and interfaces)
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
81.05.Ea
|
(III-V semiconductors)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
