| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Confined and Interface Phonons in Chirped GaAs-AlGaAs Superlattices |
| HU Yong-Zheng, LIU Feng-Qi**, WANG Li-Jun, LIU Jun-Qi, WANG Zhan-Guo |
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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HU Yong-Zheng, LIU Feng-Qi, WANG Li-Jun et al 2014 Chin. Phys. Lett. 31 064211 |
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Abstract The confined longitudinal optical, transverse optical and interface phonon modes in chirped GaAs-AlGaAs superlattices grown on the (001)-oriented GaAs substrate are studied by the micro-Raman spectroscopy. The phonon modes are probed at the (001) and (110) faces. The temperature dependence of the longitudinal optical, transverse optical and interface phonon modes are achieved. The temperature dependence of the longitudinal optical phonon frequencies demonstrates that a tensile strain exists in the GaAs layers of the chirped superlattices, which is significant for analyzing the device failure of a terahertz quantum cascade laser.
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Published: 26 May 2014
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.62.Fi
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(Laser spectroscopy)
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[1] Mozume T and Kasai J 2005 J. Cryst. Growth 278 178
[2] Shin H K, Lockwood D J and Poole P 2000 J. Appl. Phys. Lett. 77 229
[3] Popovi? Z V, Cantarero A, Camacho J, Milutinovi A, Latinovi O and González L 2000 J. Appl. Phys. 88 6382
[4] Sood A K, Menéndez J, Cardona M and Ploog K 1985 Phys. Rev. Lett. 54 2111
[5] Kim D S, Bouchalkha A, Jacob J M, Zhou J F, Song J J and Klem J F 1992 Phys. Rev. Lett. 68 1002
[6] Zucker J E, Pinczuk A, Chemla D S, Gossard A and Wiegmann W 1984 Phys. Rev. Lett. 53 1280
[7] Jusserand B, Paquet D and Regreny A 1984 Phys. Rev. B 30 6245
[8] Jusserand B and Cardona M 1988 Light Scattering Solids V (Berlin: Springer) p 49
[9] Williams B S, Callebaut H, Kumar S, Hu Q and Reno J L 2003 Appl. Phys. Lett. 82 1015
[10] Lü J T and Cao J C 2006 Appl. Phys. Lett. 88 061119
[11] Li H, Cao J C, Lü J T and Han Y J 2008 Appl. Phys. Lett. 92 221105
[12] Li H, Cao J C and Lü J T 2008 J. Appl. Phys. 103 103113
[13] Spagnolo V, Scamarcio G, Marano D, Page H and Sirtori C 2003 Appl. Phys. Lett. 82 4639
[14] Islam M R, Verma P, Yamada M, Tatsumi M and Kinoshita K 2002 Jpn. J. Appl. Phys. 41 991
[15] Yu P Y and Cardona M 2010 Fundamentals of Semiconductors Physics and Materials Properties (Berlin: Springer) p 502
[16] Cui J B, Amtmann K, Ristein J and Ley L 1998 J. Appl. Phys. 83 7929
[17] Attolini G, Francesio L, Franzosi P, Pelosi C, Gennari S and Lottici P P 1994 J. Appl. Phys. 75 4156
[18] Groenen J, Landa G, Carles R, Pizani P S and Gendry M 1997 J. Appl. Phys. 82 803 |
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