| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Switching Behavior Induced by Electric and Magnetic Fields in (La0.73Bi0.27)0.67Ca0.33MnO3 |
| WANG Ye-Shuai, XIA Nian-Ming, ZUO Hua-Kun, SHEN Yi-Ning, XIA Zheng-Cai** |
Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074
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WANG Ye-Shuai, XIA Nian-Ming, ZUO Hua-Kun et al 2014 Chin. Phys. Lett. 31 047501 |
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Abstract Both electric and magnetic field-induced switching behaviors between a high resistive state and a low resistive one are observed in (La0.73Bi0.27)0.67Ca0.33MnO3. The effects of magnetoresistance and electric-resistance suggest that the applied electric field and magnetic field greatly tune the percolative paths in the phase-separated system. According to the experimental results, the switching behaviors may come from the coexistence of the charge ordering state, and localized and freedom ferromagnetic states, in which the external field destroys partially the localized ferromagnetic states and charge ordering leads to the ferromagnetic state growth, which causes a switch between a high resistive state and low resistive one. This makes the doped manganite a good system for both electric and magnetic field sensor materials.
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Received: 11 December 2013
Published: 25 March 2014
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| PACS: |
75.50.Dd
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(Nonmetallic ferromagnetic materials)
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75.47.Gk
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(Colossal magnetoresistance)
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72.80.-r
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(Conductivity of specific materials)
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[1] Jin S, Tiefel T H, McCormack M, Fastnacht R A, Ramesh R and Chen L H 1994 Science 264 413
[2] Schiffer P, Ramirez A P, Bao W and Cheong S W 1995 Phys. Rev. Lett. 75 3336
[3] Moreo A, Yunoki S and Dagotto E 1999 Science 283 2034
[4] Hwang H Y, Cheong S W, Radaelli P G, Marezio M and Batlogg B 1995 Phys. Rev. Lett. 75 914
[5] Arulraj A, Biswas A, Raychaudhuri A K, Rao C N R, Woodward P M, Vogt T, Cox D E and Cheetham A K 1998 Phys. Rev. B 57 R8115
[6] Khomskii D 2000 Physica B 280 325
[7] Mayr M, Moreo A, Verges J A, Arispe J, Feiguin A and Dagotto E 2001 Phys. Rev. Lett. 86 135
[8] Guha A, Ghosh A, Raychaudhuri A K, Parashar S, Raju A R and Rao C N R 1999 Appl. Phys. Lett. 75 3381
[9] Guha A, Raychaudhuri A K, Raju A R and Rao C N R 2000 Phys. Rev. B 62 5320
[10] Tokunaga M, Tokunaga Y and Tamegai T 2004 Phys. Rev. Lett. 93 037203
[11] Hill N A and Rabe K M 1999 Phys. Rev. B 59 8759
[12] Sun J R, Gao J and Kang L 2002 Appl. Phys. Lett. 81 508
[13] Barandiaran J M, Gutierrez J, Righi L, Amboage M, Pena A, Hernandez T, Insausti M and Rojo T 2001 Physica B 299 286
[14] Sun J R, Gao J, Fei Y, Li R W and Shen B G 2003 Phys. Rev. B 67 144414
[15] Kim B H, Kim J S, Park T H, Lee D S, Kim K H, Kim B G and Park Y W 2007 J. Phys.: Condens. Matter 19 296205
[16] Rao G H, Sun J R, Liang J K and Zhou W Y 1997 Phys. Rev. B 55 3742
[17] Kim K H, Uehara M, Hess C, Sharma P A and Cheong S W 2000 Phys. Rev. Lett. 84 2961
[18] Biswas A and Aas I 2006 Phys. Rev. B 74 172405
[19] Xia Z C, Wang Y, Zeng H R, Zhou Q X, Hu M T, Dong B, Liu G, Feng X N, Liu L, Yuan S L and Tang C Q 2006 Solid State Commun. 137 216 |
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