| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Four-Channel 1.55-μm DFB Laser Array Monolithically Integrated with a 4×1 Multimode-Interference Combiner Based on Nanoimprint Lithography |
| CHEN Xin1, ZHAO Jian-Yi1,2**, ZHOU Ning2, HUANG Xiao-Dong2, LIU Wen1,3 |
1Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
2Accelink Technologies Company, Ltd, Wuhan 430074
3Institute of Advanced Technology, University of Science and Technology of China, Hefei 230026
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| Cite this article: |
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CHEN Xin, ZHAO Jian-Yi, ZHOU Ning et al 2014 Chin. Phys. Lett. 31 044206 |
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Abstract A monolithically integrated four-channel λ/4 phase shift distributed feedback (DFB) laser array with a 4×1 multimode interference combiner is designed and fabricated using nanoimprint lithography. The threshold currents of the lasers are less than 10 mA, which are as good as a discrete DFB laser. Moreover, the side-mode suppression ratio is also better than 50 dB. The channel space is about 200 GHz for dense wavelength division multiplexing applications in an 1.55 μm system.
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Received: 14 January 2014
Published: 25 March 2014
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| PACS: |
42.60.Da
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(Resonators, cavities, amplifiers, arrays, and rings)
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42.79.Dj
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(Gratings)
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42.79.Sz
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(Optical communication systems, multiplexers, and demultiplexers?)
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81.16.Nd
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(Micro- and nanolithography)
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42.55.Px
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(Semiconductor lasers; laser diodes)
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[1] Lee S L, Wang C Y, Pien C T, Shih T T and Jang I F 2000 IEEE J. Sel. Top. Quantum Electron. 6 197
[2] Doerr C R, Joyner C H and Gripp J 1998 IEEE Photon. Technol. Lett. 10 1374
[3] Zhu H L, Xu X D, Wang H, Kong D H, Wang B J, Zhao L J and Wang W 2010 J. Optoelectron. Laser 21 1280 (in Chinese)
[4] Li W Z, Zhang X and Yao J P 2013 Opt. Express 21 19966
[5] Ma L, Zhu H L, Liang S, Wang B J, Zhang C, Zhao L J, Bian J and Chen M H 2013 Chin. J. Semiconductor 34 044007
[6] Sasaki T, Yamaguchi M and Kitamura M 1994 Electron. Lett. 30 785
[7] Chou S Y, Krauss P R and Renstrom P J 1995 Appl. Phys. Lett. 67 3114
[8] Hsu Q C, Hsiao J J, Ho T L and Wu C D 2012 Microelectron. Eng. 91 178
[9] Viheriala J, Tommila J, Leinonen T, Dumitrescu M, Toikkanen L, Niemi T and Pessa M 2009 Microelectron. Eng. 86 321
[10] Wang L, Liu W, Zhang Y W, Qiu F, Zhou N, Wang D L, Xu Z M, Zhao Y L and Yu Y L 2012 Microelectron. Eng. 93 43
[11] Zhao J Y, Chen X, Zhou N, Qian K, Wang L, Huang X D and Liu W 2013 Semicond. Sci. Technol. 28 055015
[12] Soldano L B and Pennings E C M 1995 J. Lightwave Technol. 13 615
[13] Zhao J Y, Chen X, Zhou N, Cao M D, Huang X D and Liu W 2014 Acta Photon. Sin. 34 0206003 (in Chinese)
[14] Zhao J Y, Chen X, Qian K, Zhang D, Wang L, Zhou N, Huang X D and Liu W 2013 Acta Photon. Sin. 33 0605002 (in Chinese) |
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