| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits |
| CUI Xiao1, ZHANG Can1, LIANG Song1, ZHU Hong-Liang1**, HOU Lian-Ping2 |
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2School of Engineering, University of Glasgow, Oakfield Avenue, Glasgow, G12 8LT, UK
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| Cite this article: |
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CUI Xiao, ZHANG Can, LIANG Song et al 2014 Chin. Phys. Lett. 31 044204 |
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Abstract Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200 s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.
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Received: 16 October 2013
Published: 25 March 2014
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| PACS: |
42.82.Cr
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(Fabrication techniques; lithography, pattern transfer)
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78.55.Cr
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(III-V semiconductors)
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81.05.Ea
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(III-V semiconductors)
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81.15.Cd
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(Deposition by sputtering)
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