Chin. Phys. Lett.  2014, Vol. 31 Issue (2): 027702    DOI: 10.1088/0256-307X/31/2/027702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering
LIU Qi-Ya1,2, FANG Ze-Bo2**, JI Ting3**, LIU Shi-Yan2, TAN Yong-Sheng2, CHEN Jia-Jun1, ZHU Yan-Yan2
1College of Physics and Electronic Information, China West Normal University, Nanchong 637002
2Department of Physics, Shaoxing University, Shaoxing 312000
3Key Laboratory of Advanced Transducers and Intelligent Control System, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024
Cite this article:   
LIU Qi-Ya, FANG Ze-Bo, JI Ting et al  2014 Chin. Phys. Lett. 31 027702
Download: PDF(584KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract La2O3 films are grown on Si (100) substrates by the radio-frequency magnetron sputtering technique. The band alignment of the La2O3/Si heterojunction is analyzed by the x-ray photoelectron spectroscopy. The valence-band and the conduction-band offsets of La2O3 films to Si substrates are found to be 2.40±0.1 and 1.66±0.3 eV, respectively. Based on O 1s energy loss spectrum analysis, it can be noted that the energy gap of La2O3 films is 5.18±0.2 eV, which is confirmed by the ultra-violet visible spectrum. According to the suitable band offset and large band gap, it can be concluded that La2O3 could be a promising candidate to act as high-k gate dielectrics.
Received: 09 September 2013      Published: 28 February 2014
PACS:  77.55.+f  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/31/2/027702       OR      https://cpl.iphy.ac.cn/Y2014/V31/I2/027702
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
LIU Qi-Ya
FANG Ze-Bo
JI Ting
LIU Shi-Yan
TAN Yong-Sheng
CHEN Jia-Jun
ZHU Yan-Yan
[1] Lo S H, Buchanan D A, Taur Y and Wang W 1997 IEEE Electron Device Lett. 18 209
[2] Kingon A I, Maria J P and Streiffer S K 2000 Nature 406 1032
[3] Fang Z B, Zhu Y Y and Chen W 2011 Appl. Phys. A 102 695
[4] Zhu Y Y, Fang Z B and Tan Y S 2012 Chin. Phys. Lett. 29 087701
[5] Ji T, Cui J, Fang Z B, Nie T X, Fan Y L et al 2011 J. Cryst. Growth 321 171
[6] Zhu L Q, Kita B P and Nishimura T 2011 Jpn. J. Appl. Phys. 50 031502
[7] Robertson J 2000 J. Vac. Sci. Technol. B 18 1785
[8] Tsoutsou D, Scarel G, Debernardi A, Capelli S C, Volkos S N, Lamagna L et al 2008 Microelectron. Eng. 85 2411
[9] Kang B W, Seo J K, Kim H D and Park J W 2008 J. Korean Phys. Soc. 53 3334
[10] Kim D, Lee S, Kim C, Oh T and Kang B 2012 Jpn. J. Appl. Phys. 51 02BC10
[11] Zhang X Q, Tu H L, Zhao H B, Yang M M and Wang X N 2011 Appl. Phys. Lett. 99 132902
[12] Yamamoto Y, Kita K, Kyuno K and Toriumi A 2006 Appl. Phys. Lett. 89 032903
[13] Yim C J, Ko D, Jang M H, Chung K B, Cho M H and Jeon H T 2008 Appl. Phys. Lett. 92 012922
[14] Sze S M 1981 Hysics Semiconductor Devices 2nd edn (New York: Wiley) p 247
[15] Kraut E A, Grant R W, Waldrop J R and Kowalczyk S P 1980 Phys. Rev. Lett. 44 1620
[16] McKee R A, Walker F J, Nardelli M B, Shelton W A and Stocks G M 2003 Science 300 1726
[17] Charmbers S A, Liang Y, Yu Z et al 2001 J. Vac. Sci. Technol. A 19 934
[18] Akazawa M, Gao B, Hashizume T et al 2011 J. Appl. Phys. 109 013703
[19] Afanas'ev V V, Badylevich M, Stesmans A, Laha A, Osten H J, Fissel A et al 2008 Appl. Phys. Lett. 93 192105
[20] Tauc J, Grigorovici R and Vancu A 1966 Phys. Status Solidi 15 627
[21] Zhao Y, Kita K, Kyuno K and Toriumi A 2009 Appl. Phys. Lett. 94 042901
[22] Ohmi S, Kobayashi C, Kashiwagi I et al 2003 Electrochem Soc. 150 7-F134
[23] Zhu Y Y, Fang Z B and Liu Y S 2010 J. Rare Earths 28 752
[24] Afanas'ev V V, Chou H Y, Houssa M, Stesmans A et al 2011 Appl. Phys. Lett. 99 172101
[25] Yang T, Zhao C, Xu G B, Xu Q X, Li J F, Wang W W, Yan J et al 2012 ElectroChem. Solid-State Lett. 15 141
[26] Mahata C, Byun Y C, An C H, Choi S, An Y and Kim H 2013 ACS Appl. Mater. Interfaces 5 4195
Related articles from Frontiers Journals
[1] Wei Zhang , Chao Wang , Jian-Wei Lian , Jun Jiang, and An-Quan Jiang. Erasable Ferroelectric Domain Wall Diodes[J]. Chin. Phys. Lett., 2021, 38(1): 027702
[2] Pei-Fu Du, Ping Feng, Xiang Wan, Yi Yang, Qing Wan. Amorphous InGaZnO$_{4}$ Neuron Transistors with Temporal and Spatial Summation Function[J]. Chin. Phys. Lett., 2017, 34(5): 027702
[3] LIAO Zhao-Liang, CHEN Dong-Min. A Metal Oxide Heterostructure for Resistive Random Access Memory Devices[J]. Chin. Phys. Lett., 2013, 30(4): 027702
[4] QUAN Si, MA Xiao-Hua, ZHENG Xue-Feng, HAO Yue. An Ultrathin AlGaN Barrier Layer MIS-HEMT Structure for Enhancement-Mode Operation[J]. Chin. Phys. Lett., 2013, 30(2): 027702
[5] ZHU Yan-Yan, FANG Ze-Bo, and TAN Yong-Sheng. Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric Films[J]. Chin. Phys. Lett., 2012, 29(8): 027702
[6] WANG Xiao-Fei,**,HU Qiu-Bo,LI Li-Ben,CHEN Qing-Dong,WANG Hui-Xian,. Effect of Annealing Temperature on the Structural and Electrical Properties of a−Axis-Oriented SrTiO3 Films[J]. Chin. Phys. Lett., 2012, 29(5): 027702
[7] CUI Lian, XU Quan, HAN Zhi-You, XU Xu. Size Effects of the Properties in a Ferroelectric Bilayer Film with Surface Transition Layers[J]. Chin. Phys. Lett., 2012, 29(3): 027702
[8] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 027702
[9] LIU Xiao-Bing, MENG Jian-Wei, JIANG An-Quan**, WANG Jian-Lu . Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films[J]. Chin. Phys. Lett., 2011, 28(10): 027702
[10] WANG Li-Ping, LU Ai-Xia, DOU Wei, WAN Qing. Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba0.4Sr 0.6TiO3 Dielectric[J]. Chin. Phys. Lett., 2010, 27(7): 027702
[11] LIU Wen-Ting, LIU Zheng-Tang, TAN Ting-Ting, YAN Feng. Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films[J]. Chin. Phys. Lett., 2010, 27(2): 027702
[12] YANG Chun-Xiao, ZHANG Chi, SUN Qing-Qing, XU Sai-Sheng, ZHANG Li-Feng, SHI Yu, DING Shi-Jin, ZHANG Wei. Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition[J]. Chin. Phys. Lett., 2010, 27(2): 027702
[13] JIANG Ran, LI Zi-Feng. Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering[J]. Chin. Phys. Lett., 2009, 26(5): 027702
[14] JIANG An-Quan, TANG Ting-Ao. Correlation between Imprint and Long-Time Polarization Reversal under Low Fields in Ferroelectric Thin Films[J]. Chin. Phys. Lett., 2009, 26(1): 027702
[15] LIN Qing-Geng, GAO Xiao-Yong, GU Jin-Hua, CHEN Yong-Sheng, YANG Shi-E, LU Jing-Xiao. Spectroscopic Ellipsometry Study on Surface Roughness and Optical Property of AZO Films Prepared by Direct-Current Magnetron Reactive Sputtering Method[J]. Chin. Phys. Lett., 2008, 25(12): 027702
Viewed
Full text


Abstract