| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Synthesis and Optical Properties of InP Semiconductor Nanocombs |
| YU Yan-Long1,2, ZHAO Yi-Song1, GAO Fa-Ming1** |
1Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004
2Department of Petroleum and Chemical Engineering, Northeast Petroleum University, Qinhuangdao 066004
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| Cite this article: |
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YU Yan-Long, ZHAO Yi-Song, GAO Fa-Ming 2014 Chin. Phys. Lett. 31 128103 |
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Abstract InP semiconductor nanocombs are successfully synthesized by the chemical vapor deposition method. The detailed morphology and crystalline structures of the products are characterized by x-ray diffraction, transmission electron microscopy and high resolution transmission electron microscopy. The optical properties of InP nanocombs, including Raman and photoluminescence spectra, are studied. The possible growth mechanism of InP nanocombs is briefly discussed.
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Published: 12 January 2015
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[1] Duan X, Huang Y, Cui Y, Wang J and Lieber C M 2001 Nature 409 66
[2] Liu K, Guo X, Zhou Q Zhang B C, Luo Z J and Ding Z 2014 Chin. Phys. B 23 046806
[3] Qiao Z X, Sun Y, He W Y, Liu W, He Q and Li C J 2009 Chin. Phys. B 18 2012
[4] Guo H M, Wen L, Zhao Z F, Bu S J, Li X H and Wang Y Q 2012 Chin. Phys. B 21 108101
[5] Giessen H, Fluegel B, Mohs G, Peyghambarian N, Sprague J R, Micic O I and Nozik A J 1996 Appl. Phys. Lett. 68 304
[6] Wallentin J, Anttu N, Asoli D, Huffman M, Aberg I, Magnusson M H, Siefer G, Fuss-Kailuweit P, Dimroth F, Witzigmann B, Xu H Q, Samuelson L, Deppert K and Borgstr?m M T 2013 Science 339 1057
[7] LaPierre R R, Chia A C E, Gibson S J, Haapamaki C M, Boulanger J, Yee R, Kuyanov P, Zhang J, Tajik N, Jewell N and Rahman K M A 2013 Phys. Status Solidi 7 815
[8] Yu Y L, Zhao Y S, Gao F M and Hou L 2013 Mater. Lett. 107 178
[9] Wang L, Yang H P, Zhao H, Shi R Y, Bao L and Liu B 2011 Appl. Phys. A 104 61
[10] Tang C C, Bando Y, Liu Z W and Golberg D 2003 Chem. Phys. Lett. 376 676
[11] Bhunia S, Kawamura T, Watanabe Y, Fujikawa S and Tokushima K 2003 Appl. Phys. Lett. 83 3371
[12] Bhunia S, Kawamura T, Fujikawa S, Tokushima K and Watanabe Y 2004 Physica E 21 583
[13] Borgstr?m M T, Norberg E, Wickert P, Nilsson H A, Tr?g?rdh J, Dick K A, Statkute G, Ramvall P, Deppert K and Samuelson L 2008 Nanotechnology 19 445602
[14] Lv X L, Zhang X, Yan X, Liu X L, Cui J G, Li J S, Huang Y Q and Ren X M 2012 Chin. Phys. Lett. 29 126102
[15] Comet D M, Mazzetti V G M and LaPierre R R 2007 Appl. Phys. Lett. 90 013116
[16] Radhakrishnana G, Freundlicha A and Fuhrmannd B 2009 J. Cryst. Growth 311 1855
[17] Shen G Z, Bando Y, Liu B D, Tang C C and Golberg D 2006 J. Phys. Chem. B 110 20129
[18] Newman R 1958 Phys. Rev. 111 1518
[19] Wei S, Lu J, Yu W C and Qian Y T 2004 J. Appl. Phys. 95 3683
[20] Guzelian A A, Katari J E B, Kadavanich A V, Banin U, Hamad K, Juban E and Alivisatos A P 1996 J. Phys. Chem. 100 7212
[21] Romanov S G, Sotomayor T C M, Yates H M, Pemble M E, Butko V and Tretijakov V 1997 J. Appl. Phys. 82 380
[22] Bao K Y, Sun H X, Zhu L L and Cao J 2010 Sens. Actuators B 150 649
[23] Bao K Y, Shi L, Liu S Z, Xiong S L, Hu X B and Qian Y T 2009 J. Alloys Compd. 472 59
[24] Zhao Y S, Yu Y L and Gao F M 2013 J. Cryst. Growth 371 148
[25] Pramanik A, Fan Z, Chavva S R, Sinha S S and Ray P C 2014 Sci. Rep. 4 06090
[26] Sun Y P, Zhou B, Lin Y, Wang W, Fernando K A S, Pathak P, Meziani M J, Harruff B A, Wang X, Wang H F, Luo P G, Yang H, Kose M E, Chen B, Veca L M and Xie S Y 2006 J. Am. Chem. Soc. 128 7756 |
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