| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer |
| ZHOU Xu-Liang, PAN Jiao-Qing**, YU Hong-Yan, LI Shi-Yan, WANG Bao-Jun, BIAN Jing, WANG Wei |
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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ZHOU Xu-Liang, PAN Jiao-Qing, YU Hong-Yan et al 2014 Chin. Phys. Lett. 31 128101 |
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Abstract High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm?2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.
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Published: 12 January 2015
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| PACS: |
81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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68.55.-a
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(Thin film structure and morphology)
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71.55.Eq
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(III-V semiconductors)
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