Chin. Phys. Lett.  2014, Vol. 31 Issue (12): 126101    DOI: 10.1088/0256-307X/31/12/126101
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress
ZHENG Qi-Wen1,2,3, CUI Jiang-Wei1,2, YU Xue-Feng1,2**, GUO Qi1,2, ZHOU Hang1,2,3, REN Di-Yuan1,2
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011
2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011
3University of Chinese Academy of Sciences, Beijing 100049
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ZHENG Qi-Wen, CUI Jiang-Wei, YU Xue-Feng et al  2014 Chin. Phys. Lett. 31 126101
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Abstract The larger back-gate voltage stress is applied on 130 nm partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors isolated by shallow trench isolation. The experimental results show that the back-gate sub-threshold hump of the device is eliminated by stress. This observed behavior is caused by the high electric field in the oxide near the bottom corner of the silicon island. The total ionizing dose hardness of devices with pre back-gate stress is enhanced by the interface states induced by stress.
Published: 12 January 2015
PACS:  61.80.Ed (γ-ray effects)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.Tv (Field effect devices)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/31/12/126101       OR      https://cpl.iphy.ac.cn/Y2014/V31/I12/126101
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ZHENG Qi-Wen
CUI Jiang-Wei
YU Xue-Feng
GUO Qi
ZHOU Hang
REN Di-Yuan
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