Chin. Phys. Lett.  2014, Vol. 31 Issue (11): 118102    DOI: 10.1088/0256-307X/31/11/118102
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Polarization Induced High Al Composition AlGaN p–n Junction Grown on Silicon Substrates
ZHANG Peng1, LI Shi-Bin1**, YU Hong-Ping1, WU Zhi-Ming1, CHEN Zhi1,2, JIANG Ya-Dong1
1State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054
2Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA
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ZHANG Peng, LI Shi-Bin, YU Hong-Ping et al  2014 Chin. Phys. Lett. 31 118102
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Abstract Wide bandgap AlGaN (x=0.7–1) p-n junction is realized on a silicon substrate through polarization induced doping. Polarization induced positive charge field is produced by linearly grading from AlN to Al0.7Ga0.3N, and negative charge field is generated by an inverted grading from Al0.7Ga0.3N to AlN. The polarization charge field induced hole density is on the order of 1018 cm?3 in the graded AlxGa1?xN:Be (x=0.7–1) p-n junction. Polarization doping provides a feasible way to mass produce III-nitride devices on silicon substrates.
Published: 28 November 2014
PACS:  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
  73.50.-h (Electronic transport phenomena in thin films)  
  73.61.Ey (III-V semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/31/11/118102       OR      https://cpl.iphy.ac.cn/Y2014/V31/I11/118102
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ZHANG Peng
LI Shi-Bin
YU Hong-Ping
WU Zhi-Ming
CHEN Zhi
JIANG Ya-Dong
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