Chin. Phys. Lett.  2014, Vol. 31 Issue (10): 106103    DOI: 10.1088/0256-307X/31/10/106103
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Equivalent Trap Energy Level Extraction for SiGe Using Gate-Induced-Drain-Leakage Current Analysis
LIU Chang1, YU Wen-Jie1**, ZHANG Bo1, XUE Zhong-Ying1, WU Wang-Ran2, ZHAO Yi3, ZHAO Qing-Tai4
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
3Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027
4Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA Fundamentals of Future Intormation Technology, Jülich 52425, Germany
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LIU Chang, YU Wen-Jie, ZHANG Bo et al  2014 Chin. Phys. Lett. 31 106103
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Abstract The gate-induced-drain-leakage of MOSFETs is analyzed to better understand the sub-threshold swing degradation of SiGe tunnel field-effect transistors and their band-to-band tunneling mechanism. The numerical model of the analysis is elaborated. Equivalent trap energy levels are extracted for Si and strained SiGe. It is found that the equivalent trap energy level in SiGe is shallower than that in Si.
Published: 31 October 2014
PACS:  61.72.uf (Ge and Si)  
  77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)  
  72.20.Ee (Mobility edges; hopping transport)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/31/10/106103       OR      https://cpl.iphy.ac.cn/Y2014/V31/I10/106103
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LIU Chang
YU Wen-Jie
ZHANG Bo
XUE Zhong-Ying
WU Wang-Ran
ZHAO Yi
ZHAO Qing-Tai
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