Chin. Phys. Lett.  2014, Vol. 31 Issue (1): 017701    DOI: 10.1088/0256-307X/31/1/017701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Strain Induced Metastable Phase and Phase Revolution in PbTiO3-CoFe2O4 Nanocomposite Film
HU Chuan-Sheng1, LUO Zhen-Lin1**, SUN Xia2, PAN Guo-Qiang1, HE Qing3, WEN Wen3, ZHOU Xing-Tai3, Ichiro Takeuchi4, GAO Chen1,2,5**
1National Synchrotron Radiation Laboratory & School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230026
2Department of Physics, University of Science and Technology of China, Hefei 230026
3Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, P. O. Box 800-204, Shanghai 201800
4Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
5Department of Materials Science and Engineering & CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026
Cite this article:   
HU Chuan-Sheng, LUO Zhen-Lin, SUN Xia et al  2014 Chin. Phys. Lett. 31 017701
Download: PDF(1013KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract An inter-component epitaxial strain-induced PbTiO3 metastable phase is observed in a PbTiO3-CoFe2O4 epitaxial composite film, corresponding to the dielectric anomaly reported previously. High-resolution synchrotron radiation X-ray diffraction and first principles calculation demonstrate the coexistence of different PbTiO3 phases, even a possible morphotropic phase boundary in the film, elucidating the underlying microscopic mechanism of the formation of PbTiO3 metastable phase. This sheds light on the design and manipulation of electromechanical properties of epitaxial films, through the strain engineering.
Received: 16 August 2013      Published: 28 January 2014
PACS:  77.55.Px (Epitaxial and superlattice films)  
  77.55.Nv (Multiferroic/magnetoelectric films)  
  77.80.bn (Strain and interface effects)  
  78.67.Sc (Nanoaggregates; nanocomposites)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/31/1/017701       OR      https://cpl.iphy.ac.cn/Y2014/V31/I1/017701
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
HU Chuan-Sheng
LUO Zhen-Lin
SUN Xia
PAN Guo-Qiang
HE Qing
WEN Wen
ZHOU Xing-Tai
Ichiro Takeuchi
GAO Chen
[1] Choi K J, Biegalski M, Li Y L, Sharan A, Schubert J, Uecker R, Reiche P, Chen Y B, Pan X Q, Gopalan V, Chen L Q, Schlom D G and Eom C B 2004 Science 306 1005
[2] Haeni J H, Irvin P, Chang W, Uecker R, Reiche P, Li Y L, Choudhury S, Tian W, Hawley M E, Craigo B, Tagantsev A K, Pan X Q, Streiffer S K, Chen L Q, Kirchoefer S W, Levy J and Schlom D G 2004 Nature 430 758
[3] Warusawithana M P, Cen C, Sleasman C R, Woicik J C, Li Y L, Kourkoutis L F, Klug J A, Li H, Ryan P, Wang L P, Bedzyk M, Muller D A, Chen L Q, Levy J and Schlom D G 2009 Science 324 367
[4] Beach R S, Borchers J A, Matheny A, Erwin R W, Salamon M B, Everitt B, Pettit K, Rhyne J J and Flynn C P 1993 Phys. Rev. Lett. 70 3502
[5] Bozovic I, Logvenov G, Belca I, Narimbetov B and Sveklo I 2002 Phys. Rev. Lett. 89 107001
[6] Gebhardt U, Kasper N V, Vigliante A, Wochner P, Dosch H, Razavi F S and Habermeier H U 2007 Phys. Rev. Lett. 98 096101
[7] Zeches R J, Rossell M D, Zhang J X, Hatt A J, He Q, Yang C H, Kumar A, Wang C H, Melville A, Adamo C, Sheng G, Chu Y H, Ihlefeld J F, Erni R, Ederer C, Gopalan V, Chen L Q, Schlom D G, Spaldin N A, Martin L W and Ramesh R 2009 Science 326 977
[8] Lee K S and Baik S 2000 J. Appl. Phys. 87 8035
[9] Nishida K, Shirakata K, Osada M, Kakihana M and Katoda T 2003 Appl. Surf. Sci. 216 323
[10] Harrington S A, Zhai J Y, Denev S, Gopalan V, Wang H Y, Bi Z X, Redfern S A T, Baek S H, Bark C W, Eom C B, Jia Q X, Vickers M E and MacManus-Driscoll J L 2011 Nat. Nanotechnol. 6 491
[11] Zavaliche F, Zheng H, Mohaddes Ardabili L, Yang S Y, Zhan Q, Shafer P, Reilly E, Chopdekar R, Jia Y, Wright P, Schlom D G, Suzuki Y and Ramesh R 2005 Nano Lett. 5 1793
[12] Chen Z H, Luo Z L, Huang C W, Qi Y J, Yang P, You L, Hu C S, Wu T, Wang J L, Gao C, Sritharan T and Chen L 2011 Adv. Funct. Mater. 21 133
[13] Noheda B, Cox D E and Shirane G 1999 Appl. Phys. Lett. 74 2059
[14] Guo R, Cross L E, Park S E, Noheda B, Cox D E and Shirane G 2000 Phys. Rev. Lett. 84 5423
[15] Cox D E, Noheda B, Shirane G, Uesu Y, Fujishiro K and Yamada Y 2001 Appl. Phys. Lett. 79 400
[16] Fu H X and Cohen R E 2000 Nature 403 281
[17] Noheda B, Cox D E, Shirane G, Park S E, Cross L E and Zhong Z 2001 Phys. Rev. Lett. 86 3891
[18] Murakami M, Chang K S, Aronova M A, Lin C L, Yu M H, Simpers J H, Wuttig M, Takeuchi I, Gao C, Hu B, Lofland S E, Knauss L A and Bendersky L A 2005 Appl. Phys. Lett. 87 112901
[19] Gao C, Hu B, Li X F, Liu C H, Murakami M, Chang K S, Long C J, Wuttig M and Takeuchi I 2005 Appl. Phys. Lett. 87 153505
[20] Foster C M, Li Z, Buckett M, Miller D, Baldo P M, Rehn L E, Bai G R, Guo D, You H and Merkle K L 1995 J. Appl. Phys. 78 2607
[21] Kim S, Kang Y and Baik S 1995 Thin Solid Films 256 240
[22] Kresse G and Joubert D 1999 Phys. Rev. B 59 1758
[23] Kresse G and Furthmüller J 1996 Phys. Rev. B 54 11169
[24] Wu Z G and Cohen R E 2005 Phys. Rev. Lett. 95 037601
[25] Ahart M, Somayazulu M, Cohen R E, Ganesh P, Dera P, Mao H K, Hemley R J, Ren Y, Liermann P and Wu Z G 2008 Nature 451 545
[26] Chen Z H, Prosandeev S, Luo Z L, Ren W, Qi Y, Huang C W, You L, Gao C, Kornev I A, Wu T, Wang J, Yang P, Sritharan T, Bellaiche L and Chen L 2011 Phys. Rev. B 84 094116
[27] Damodaran A R, Liang C W, He Q, Peng C Y, Chang L, Chu Y H and Martin L W 2011 Adv. Mater. 23 3170
[28] Liu H J, Liang C W, Liang W I, Chen H J, Yang J C, Peng C Y, Wang G F, Chu F N, Chen Y C, Lee H Y, Chang L, Lin S J and Chu Y H 2012 Phys. Rev. B 85 014104
[29] Luo Z, Chen Z, Yang Y, Liu H J, Huang C, Huang H, Wang H, Yang M M, Hu C, Pan G, Wen W, Li X, He Q, Sritharan T, Chu Y H, Chen L and Gao C 2013 Phys. Rev. B 88 064103
Related articles from Frontiers Journals
[1] Zhao-Zhao Hou, Gui-Lei Wang, Jia-Xin Yao, Qing-Zhu Zhang, Hua-Xiang Yin. Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel[J]. Chin. Phys. Lett., 2018, 35(5): 017701
[2] Zhao-Zhao Hou, Gui-Lei Wang, Jin-Juan Xiang, Jia-Xin Yao, Zhen-Hua Wu, Qing-Zhu Zhang, Hua-Xiang Yin. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-$\kappa$ Dielectrics and SiGe Epitaxial Substrates[J]. Chin. Phys. Lett., 2017, 34(9): 017701
[3] LI Ming-Ying, LIU Zheng-Tai, YANG Hai-Feng, ZHAO Jia-Lin, YAO Qi, FAN Cong-Cong, LIU Ji-Shan, GAO Bo, SHEN Da-Wei, XIE Xiao-Ming. Tuning the Electronic Structure of Sr2IrO4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2015, 32(5): 017701
Viewed
Full text


Abstract