| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Non-UV Photoelectric Properties of the Ni/n-Si/N+-SiC Isotype Heterostructure Schottky Barrier Photodiode |
| LI Lian-Bi1,2, CHEN Zhi-Ming1**, REN Zhan-Qiang1, GAO Zhan-Jun1 |
1Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048
2School of Science, Xi'an Polytechnic University, Xi'an 710048
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| Cite this article: |
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LI Lian-Bi, CHEN Zhi-Ming, REN Zhan-Qiang et al 2013 Chin. Phys. Lett. 30 097304 |
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Abstract The energy-band structure and non-ultraviolet photoelectric properties of a Ni/n-Si/N+-SiC isotype heterostructure Schottky photodiode are simulated by using Silvaco-Atlas. There are energy offsets in the conduction and valance band of the heterojunction, which are about 0.09 eV and 1.79 eV, respectively. The non-UV photodiode with this structure is fabricated on a 6H-SiC(0001) substrate. J–V measurements indicate that the device has good rectifying behavior with a rectification ratio up to 200 at 5 V, and the turn-on voltage is about 0.7 V. Under non-ultraviolet illumination of 0.6 W/cm2, the device demonstrates a significant photoelectric response with a photocurrent density of 2.9 mA/cm2 and an open-circuit voltage of 63.0 mV. Non-ultraviolet operation of the SiC-based photoelectric device is initially realized.
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Received: 23 April 2013
Published: 21 November 2013
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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