| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Simultaneous Formation of AlB2-Type and ThSi2-Type Nanoislands of Er Silicide by Using a Prepatterned Si(001) Substrate |
| LIU Bei-Bei, CAI Qun** |
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433
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| Cite this article: |
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LIU Bei-Bei, CAI Qun 2013 Chin. Phys. Lett. 30 096801 |
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Abstract We report the simultaneous growth of hexagonal AlB2-phase and tetragonal ThSi2-phase nanoislands of erbium silicide on the same silicon substrate. As a new technique, the patterned Si(001) surface with pits in a reverse-pyramid shape and {111} sidewalls is taken as the substrate template. The distribution of nanoislands reveals that the upward diffusion over surface steps plays an influential role on the location of islands. Si {111} facets on the pit sidewalls actually provide growth symmetry for the hexagonal islands. This work paves the way for exploring the intrinsic electrical transport properties of metal-semiconductor nanocontacts.
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Received: 09 May 2013
Published: 21 November 2013
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| PACS: |
68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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68.43.Jk
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(Diffusion of adsorbates, kinetics of coarsening and aggregation)
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62.23.St
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(Complex nanostructures, including patterned or assembled structures)
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[1] Zhu Y, Zhou W, Wang S H, Ji T, Hou X Y and Cai Q 2006 J. Appl. Phys. 100 114312
[2] Eames C, Probert M I J and Tear S P 2010 Appl. Phys. Lett. 96 241903
[3] Ji T, Song J Q, Zhou W and Cai Q 2007 Appl. Surf. Sci. 253 3184
[4] Ding T, Wu Y Q, Song J Q, Li J, Huang H, Zou J and Cai Q 2011 Nanotechnology 22 245707
[5] Tedesco J L, Rowe J E and Nemanich R J 2009 J. Appl. Phys. 105 083721
[6] Hao L and Bennett P A 2009 Nanotechnology 20 355201
[7] Song J Q, Ding T and Cai Q 2010 Appl. Phys. Lett. 96 203113
[8] Hasegawa Y, Lyo I W and Avouris P 1996 Surf. Sci. 357 32
[9] Roge T P, Palmino F, Savall C, Labrune J C, Wetzel P, Pirri C and Gewinner G 1995 Phys. Rev. B 51 10998
[10] Chen P, Fan Y L and Zhong Z Y 2009 Nanotechnology 20 095303
[11] Zhong Z Y, Chen P X, Jiang Z M and Bauer G 2008 Appl. Phys. Lett. 93 043106
[12] Wetzel P, Saintenoy S, Pirri C, Bolmont D, Gewinner G, Roge T P, Palmino F, Savall C and Labrune J C 1996 Surf. Sci. 355 13
[13] He Z, Smith D J and Bennett P A 2004 Phys. Rev. Lett. 93 256102
[14] George T and Fathauer R W 1991 Appl. Phys. Lett. 59 3249 |
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