| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
The Microwave Characteristics of an In0.4Ga0.6As Metal-Oxide-Semiconductor Field-Effect Transistor with an In0.49Ga0.51P Interfacial Layer |
| LIU Gui-Ming, CHANG Hu-Dong, SUN Bing, LIU Hong-Gang** |
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
|
|
| Cite this article: |
|
LIU Gui-Ming, CHANG Hu-Dong, SUN Bing et al 2013 Chin. Phys. Lett. 30 087304 |
|
|
|
|
Abstract A high microwave performance enhancement-mode (E-mode) In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a Si-doped In0.49Ga0.51P interfacial layer is fabricated. A 0.8-μm-gate-length In0.4Ga0.6As MOSFET with a 5-nm Al2O3 dielectric layer provides a current gain cutoff frequency of 16.7 GHz and a maximum oscillation frequency of 52 GHz. A semi-empirical small-signal-parameter extraction technique accounting for the low frequency anomaly of this MOSFET device is described, which is based on on-wafer S-parameter measurements. Excellent agreement between measured and simulated scattering parameters as well as the physically realistic circuit elements demonstrates the validity of this approach.
|
|
|
Received: 17 May 2013
Published: 21 November 2013
|
|
| PACS: |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
77.84.Bw
|
(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
