| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Self-Assembled in-Plane-Gate Thin-Film Transistors Gated by WOx Solid-State Electrolytes |
| ZHU De-Ming1,2, MEN Chuan-Ling1**, WAN Xiang2, DENG Chuang1, LI Zhen-Peng1 |
1School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093
2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201
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| Cite this article: |
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ZHU De-Ming, MEN Chuan-Ling, WAN Xiang et al 2013 Chin. Phys. Lett. 30 087302 |
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Abstract Low-voltage WOx gated indium-zinc-oxide thin-film transistors (TFTs) with in-plane-gate structures are fabricated by using an extremely simplified one-shadow mask method at room temperature. The proton conductive WOx solid-state electrolyte is demonstrated to form an electric-double-layer (EDL) effect associated with a huge capacitance of 0.51 μF/cm2. The special EDL capacitance of the WOx electrolyte is also extended to novel in-plane-gate structure TFTs as the gate dielectric, reducing the operating voltage to 1.8 V. Such TFTs operate at n-type depletion mode with a threshold voltage of ?0.5 V, saturation electron mobility of 13.2 cm2/V?s, ON/OFF ratio of 1.7×106, subthreshold swing of 110 mV/dec, and low leakage current less than 7 nA. The hysteresis window of the transfer curves is also explained by an unique reaction within the WOx electrolyte.
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Received: 07 April 2013
Published: 21 November 2013
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| PACS: |
73.61.Jc
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(Amorphous semiconductors; glasses)
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73.40.Mr
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(Semiconductor-electrolyte contacts)
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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