Chin. Phys. Lett.  2013, Vol. 30 Issue (7): 075202    DOI: 10.1088/0256-307X/30/7/075202
PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems
A. Limcharoen1**, C. Pakpum2, P. Limsuwan1,3
1Department of Physics, Faculty of Science, King Mongkut's University of Technology Thonburi, Bangkok, 10140, Thailand
2Program in Materials Science, Faculty of Science, Maejo University, Chiang Mai, 50290, Thailand
3Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Rd., Bangkok, 10400, Thailand
Cite this article:   
A. Limcharoen, C. Pakpum, P. Limsuwan 2013 Chin. Phys. Lett. 30 075202
Download: PDF(666KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work. In this study, we propose a novel etching method called the polymer-rich re-deposition technique, used particularly for improving the etched sidewall where the re-deposition is able to accumulate. This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product. The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution. The traditional, additional cleaning process step used to remove the re-deposition material is not required anymore, so this reduces the overall processing time. The technique is demonstrated on an Al2O3-TiC substrate by C4F8 plasma, and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms, suggesting that it is a C–F polymer re-deposition.
Received: 22 April 2013      Published: 21 November 2013
PACS:  52.77.-j (Plasma applications)  
  52.77.Bn (Etching and cleaning)  
  82.35.-x (Polymers: properties; reactions; polymerization)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/30/7/075202       OR      https://cpl.iphy.ac.cn/Y2013/V30/I7/075202
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
A. Limcharoen
C. Pakpum
P. Limsuwan
[1] Bhardwaj J, Haynes D M, Grange J A, Lea L, Riddell K N, Davidson S R and Stephens M 1998 Datatech 1st edn p 131
[2] Limcharoen A, Pakpum C and Limsuwan P 2012 Procedia Eng. 32 1043
[3] Coburn J W 1979 J. Appl. Phys. 50 5210
[4] Coburn J W and Winters H F 1979 J. Appl. Phys. 50 3189
[5] Ji B, Motika S A, Badowski P R, Dheandhanoo S, Stets J R and Kawacki E J 2005 Available: http://www.Electroiq.Com/articles/sst/Print/volume-48/issue-11/features/gases-gas-handling/fluorine-plasma-Chem.-for-high-ar-dielectric-etching.Html [8 April 2012]
[6] Srinivasan N K, Su M C, Michael J V, Jasper A W, Klippenstein S J and Harding L B 2008 J. Phys. Chem. A 112 31
Related articles from Frontiers Journals
[1] Cheng-Lei Guo, Bin-Bin Wang, Wei Xia, Yan-Feng Guo, Jia-Min Xue. A New Effect of Oxygen Plasma on Two-Dimensional Field-Effect Transistors: Plasma Induced Ion Gating and Synaptic Behavior[J]. Chin. Phys. Lett., 2019, 36(7): 075202
[2] QIAN Mu-Yang, YANG Cong-Ying, CHEN Xiao-Chang, NI Geng-Song, LIU-Song, WANG De-Zhen. Modeling of the Distinctive Ground-State Atomic Oxygen Density Profile in Plasma Needle Discharge at Atmospheric Pressure[J]. Chin. Phys. Lett., 2015, 32(07): 075202
[3] Sharmin Sultana, Jichul Shin. Dynamic Characteristics of a Microhollow Cathode Sustained Discharge with Split Third Electrodes for Potential Flow Application to Flow Velocimetry[J]. Chin. Phys. Lett., 2014, 31(09): 075202
[4] CHEN Wei, HUANG Jun, DU Ning, LIU Xiao-Di, LV Guo-Hua, WANG Xing-Quan, ZHANG Guo-Ping, GUO Li-Hong, YANG Si-Ze. Deactivation of Enterococcus Faecalis Bacteria by an Atmospheric Cold Plasma Brush[J]. Chin. Phys. Lett., 2012, 29(7): 075202
[5] ZHANG Yu-Tao**, GUO Ying, MA Teng-Cai . Plasma Catalytic Synthesis of Silver Nanoparticles[J]. Chin. Phys. Lett., 2011, 28(10): 075202
[6] LIU Feng, WANG Wei-Wei, CHANG Xi-Jiang, LIANG Rong-Qing** . Preliminary Investigation of a Dielectric Barrier Discharge Lamp in Open Air at Atmospheric Pressure[J]. Chin. Phys. Lett., 2011, 28(8): 075202
[7] LI Xiang-Zhou, ZHANG Xian-Hui, HE Ping, NIU Er-Wu, XIA Yuan-Yu, HUANG Jun, FENG Ke-Cheng, YANG Si-Ze. Effect of Substrate Bias on Microstructures of Zirconia Thin Films Deposited by Cathodic Vacuum Arc[J]. Chin. Phys. Lett., 2007, 24(6): 075202
[8] LIU Xiu-Jun, CHEN Guang-Liang, CHEN Shi-Hua, QIAN Feng, FENG Ke-Cheng, YANG Si-Ze. Removal of NO Molecules by a Novel Atmospheric Pressure Plasma Apparatus[J]. Chin. Phys. Lett., 2006, 23(10): 075202
[9] NIU Er-Wu, FAN Song-Hua, LI Li, LU Guo-Hua, FENG Wen-Ran, ZHANG Gu-Ling, YANG Si-Ze. Deposition of TiN Films by Novel Filter Cathodic Arc Technique[J]. Chin. Phys. Lett., 2006, 23(6): 075202
Viewed
Full text


Abstract