| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition |
| LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao** |
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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LUO Shuai, JI Hai-Ming, GAO Feng et al 2013 Chin. Phys. Lett. 30 068101 |
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Abstract We demonstrate InAs/InGaAsP/InP quantum dot (QD) lasers grown by metalorganic chemical vapor deposition. The active region of the lasers consists of five layers of InAs QDs. Ridge waveguide lasers with 6 μm width have been fabricated by standard optical lithography and wet etching. Under continuous wave operation at room temperature, a low threshold current density of 447 A/cm2 per QD layer is achieved for a QD laser with a cavity length of 2 mm. Moreover, the lasing redshifts from 1.61 μm to 1.645 μm as the cavity length increases from 1.5 mm to 4 mm. A high characteristic temperature of up to 88 K is obtained in the temperature range between 10°C and 40°C.
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Received: 22 February 2013
Published: 31 May 2013
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