InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers

doi:10.1088/0256-307X/30/5/058503

Chin. Phys. Lett.

2013, Vol. 30

Issue (5): 058503 DOI: 10.1088/0256-307X/30/5/058503

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers

TONG Jin-Hui, ZHAO Bi-Jun, REN Zhi-Wei, WANG Xing-Fu, CHEN Xin, LI Shu-Ti^*

Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631

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TONG Jin-Hui, ZHAO Bi-Jun, REN Zhi-Wei et al 2013 Chin. Phys. Lett. 30 058503

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Abstract A three-layer p-type Al_0.82In_0.18N–GaN–Al_0.82In_0.18N electron blocking layer (EBL) is designed to replace the original p-type AlGaN EBL in blue light emitting diodes (LEDs). The fabricated LEDs with Al_0.82In_0.18N–GaN–Al_0.82In_0.18N EBLs exhibit enhanced light output power and an alleviated efficiency drop compared to the original EBL. The improved performance is attributed to more effective electron confinement by this specially designed EBL and improved crystalline quality in the InGaN/GaN active region.

Received: 14 March 2013 Published: 31 May 2013

PACS:	85.60.Jb	(Light-emitting devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)
	73.61.Ey	(III-V semiconductors)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/30/5/058503 OR https://cpl.iphy.ac.cn/Y2013/V30/I5/058503

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	TONG Jin-Hui
	ZHAO Bi-Jun
	REN Zhi-Wei
	WANG Xing-Fu
	CHEN Xin
	LI Shu-Ti

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