| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric |
| MAO Wei1**, HAO Yue1, YANG Cui2, ZHANG Jin-Cheng1, MA Xiao-Hua2, WANG Chong1, LIU Hong-Xia1, YANG Lin-An1, ZHANG Jin-Feng1, ZHENG Xue-Feng1, ZHANG Kai1, CHEN Yong-He1, YANG Li-Yuan1 |
1Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
2School of Technical Physics, Xidian University, Xi'an 710071
|
|
| Cite this article: |
|
MAO Wei, HAO Yue, YANG Cui et al 2013 Chin. Phys. Lett. 30 058502 |
|
|
|
|
Abstract We report the studies of In0.15Al0.85N/AlN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors with a field plate (FP) and a plasma-enhanced chemical vapor deposition (PECVD) SiN layer as the gate dielectric as well as the surface passivation layer (FP-MIS HEMTs). Compared with conventional In0.15Al0.85N/AlN/GaN high electron mobility transistors (HEMTs) of the same dimensions, the FP-MIS HEMTs exhibit a maximum drain current of 1211 mA/mm, a breakdown voltage of 120 V, an effective suppression of current collapse, about one order of magnitude reduction in reverse gate leakage, as well as more than five orders of magnitude reduction in forward gate leakage. These results confirm the potential of PECVD SiN in the application of the InAlN/AlN/GaN FP-MIS HEMTs.
|
|
|
Received: 28 December 2012
Published: 31 May 2013
|
|
| PACS: |
85.30.Tv
|
(Field effect devices)
|
| |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
|
|
|
|
|
[1] Lee D S, Chung J W, Wang H, Gao X, Guo S, Fay P and Palacios T 2011 IEEE Electron Device Lett. 32 755
[2] Lee D S, Gao X, Guo S, Kopp D, Fay P and Palacios T 2011 IEEE Electron Device Lett. 32 1525
[3] Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Fang T, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D and Xing H 2012 IEEE Electron Device Lett. 33 988
[4] Kuzmík J 2001 IEEE Electron Device Lett. 22 510
[5] Gonschorek M, Carlin J F, Feltin E, Py M A, Grandjean N, Darakchieva V, Monemar B, Lorenz M and Ramm G 2008 J. Appl. Phys. 103 093714
[6] Gačević Ž Fernández-Garrido S, Rebled J M, Estradé S, Peiró F and Calleja E 2011 Appl. Phys. Lett. 99 031103
[7] Lecourt F, Ketteniss N, Behmenburg H, Defrance N, Hoel V, Eickelkamp M, Vescan A, Giesen C, Heuken M and De Jaeger J C 2011 Electron. Lett. 47 212
[8] Lecourt F, Ketteniss N, Behmenburg H, Defrance N, Hoel V, Eickelkamp M, Vescan A, Giesen C, Heuken M and De Jaeger J C 2011 IEEE Electron Device Lett. 32 1537
[9] Maier D, Alomari M, Grandjean N, Carlin J F, Diforte-Poisson M A, Dua C, Delage S and Kohn E 2012 IEEE Electron Device Lett. 33 985
[10] Tülek R, Ilgaz A, G?kden S, Teke A, ?ztürk M K, Kasap M, ?z?elik S, Arslan E and ?zbay E 2009 J. Appl. Phys. 105 013707
[11] Chikhaoui W, Bluet J M, Poisson M A, Sarazin N, Dua C and Bru-Chevallier C 2010 Appl. Phys. Lett. 96 072107
[12] Donoval D, Chvála A, ?ramaty R, Kováč J, Carlin J F, Grandjean N, Pozzovivo G, Kuzmík J, Pogany D, Strasser G and Kordo? P 2010 Appl. Phys. Lett. 96 223501
[13] Lee H, Piedra D, Sun M, Gao X, Guo S and Palacios T 2012 IEEE Electron Device Lett. 33 982
[14] Kuzmik J, Pozzovivo G, Abermann S, Carlin J, Gonschorek M, Feltin E, Grandjean N, Bertagnolli E, Strasser G and Pogany D 2008 IEEE Trans. Electron Devicesces 55 937
[15] Mao W, Zhang J C, Xue J S, Hao Y, Ma X H, Wang C, Liu H X, Xu S R, Yang L A, Bi Z W, Liang X Z, Zhang J F and Kuang X W 2010 Chin. Phys. Lett. 27 128501
[16] Hu X, Koudymov A, Simin G, Yang J, Asif Khan M, Tarakji A, Shur M S and Gaska R 2001 Appl. Phys. Lett. 79 2832
[17] Asif Khan M, Shur M S and Simin G 2003 Phys. Status Solidi A 200 155
[18] Cordier Y, Lecotonnec A, Chenot S, Baron N, Nacer F, Goullet A, Lhermite H, El Kazzi M, Regreny P, Hollinger G and Besl M P 2009 Phys. Status Solidi C 6 S1016
[19] Ng C H, Chew K W and Chu S F 2003 IEEE Electron Device Lett. 24 506
[20] Tipirneni N, Adivarahan V, Simin G and Khan A 2007 IEEE Electron Device Lett. 28 784
[21] Mao W, Yang C, Hao Y, Zhang J C, Liu H X, Ma X H, Wang C, Zhang J F, Yang L A, Xu S R, Bi Z W, Zhou Zh, Yang L and Wang H 2011 Acta Phys. Sin. 60 017205 (in Chinese) |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
