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Charge States and Transition of Double Quantum Dot in the Few-Electron Regime |
| ZHOU Cheng, WANG Li, TU Tao**, HAN Tian-Yi, LI Hai-Ou, GUO Guo-Ping** |
| Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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ZHOU Cheng, WANG Li, TU Tao et al 2013 Chin. Phys. Lett. 30 050301 |
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Abstract We present transport characterizations of a fully tunable double quantum dot over the few electron number down to zero, which is defined by means of surface gates on top of a GaAs/AlGaAs heterostructure. We also perform numerical simulations to map out the charge stability diagram, which is consistent with the measurements. The results demonstrate that the electric control in the double dot can be significantly enhanced by improving the design of the device structure, which provides potential advantages for quantum information processing.
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Received: 28 January 2013
Published: 31 May 2013
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| PACS: |
03.67.Lx
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(Quantum computation architectures and implementations)
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03.65.Yz
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(Decoherence; open systems; quantum statistical methods)
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03.65.Ta
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(Foundations of quantum mechanics; measurement theory)
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