| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A Metal Oxide Heterostructure for Resistive Random Access Memory Devices |
| LIAO Zhao-Liang1, CHEN Dong-Min2 |
1Department of Physics and Astronomy, Louisianan State University, Baton Rouge, LA 70810, USA
2Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871
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| Cite this article: |
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LIAO Zhao-Liang, CHEN Dong-Min 2013 Chin. Phys. Lett. 30 047701 |
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Abstract We propose and investigate a metal oxide heterostructure (MOH) based resistive switching (RS) device. The driving mechanism of resistive switching (RS) in an MOH is more directly related to oxygen ion/vacancy migration around their interface. The performance of an MOH-based RS device depends on the oxygen mobility, oxygen vacancy concentration as well as its relation to the resistivity. An enhanced ratio of high resistance state to low resistance state can be achieved if the two involved metal oxides are mutually complemental metal oxides in which one of them has larger resistivity with increasing concentration of vacancy while the other one is the reverse.
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Received: 04 October 2012
Published: 28 April 2013
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| PACS: |
77.80.Fm
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(Switching phenomena)
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77.55.+f
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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