| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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High Quality Pseudomorphic In0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators |
| YANG Xiao-Hong1**, LIU Shao-Qing1, NI Hai-Qiao2, LI Mi-Feng2, LI Liang1, HAN Qin1, NIU Zhi-Chuan2 |
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2State Key laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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YANG Xiao-Hong, LIU Shao-Qing, NI Hai-Qiao et al 2013 Chin. Phys. Lett. 30 046102 |
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Abstract The good quality of 200 pairs of highly strained In0.24GaAs/GaAs multi-quantum-well (MQW) structure is demonstrated by the x-ray diffraction and photoluminescence curves. Large-area modulators based on the pseudomorphic In0.24GaAs/GaAs MQW are designed and fabricated successfully, where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm. The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V .
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Received: 21 November 2012
Published: 28 April 2013
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| PACS: |
61.05.cp
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(X-ray diffraction)
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78.55.Cr
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(III-V semiconductors)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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42.79.Hp
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(Optical processors, correlators, and modulators)
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[8] Bolle F and Gillina W, Hopkinson M and Gwilliam R 2005 J. Appl. Phys. 97 013536 |
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