| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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The High Quantum Efficiency of Exponential-Doping AlGaAs/GaAs Photocathodes Grown by Metalorganic Chemical Vapor Deposition |
| ZHANG Yi-Jun1**, ZHAO Jing1, ZOU Ji-Jun1,2, NIU Jun1, CHEN Xin-Long1, CHANG Ben-Kang1 |
1Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094
2Engineering Research Center of Nuclear Technology Application (Ministry of Education), East China Institute of Technology, Nanchang 330013
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| Cite this article: |
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ZHANG Yi-Jun, ZHAO Jing, ZOU Ji-Jun et al 2013 Chin. Phys. Lett. 30 044205 |
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Abstract An exponential-doping structure is successfully applied to the preparation of AlGaAs/GaAs photocathodes through the metalorganic chemical vapor deposition (MOCVD) technique. The experimental results show that the quantum efficiency in the entire waveband region for the exponential-doping photocathodes grown by MOCVD is remarkably enhanced as compared to those grown by molecular beam epitaxy. As a result of the improved built-in electric fields and cathode performance parameters, the photoemission characteristics for the MOCVD-grown transmission-mode and reflection-mode AlGaAs/GaAs photocathodes are different over the wavelength region of interest.
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Received: 05 November 2012
Published: 28 April 2013
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| PACS: |
42.70.Gi
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(Light-sensitive materials)
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71.55.Eq
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(III-V semiconductors)
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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