| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Improvement of Ni Silicide Thermal Stability By Using Vanadium Elements |
| LIU Hai-Long1, LIU Yan2, LIU Min3, WANG Tao4**, A. Tuya5 |
1Department of Radiology, Zhejiang Province Tongde Hospital, Hangzhou 310012
2Department of Radiology, Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 312000
3Department of Radiology, The Second Hospital, Shaoxing 312000
4College of Electrical Engineering, Zhejiang University, Hangzhou 310012
5Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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| Cite this article: |
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LIU Hai-Long, LIU Yan, LIU Min et al 2013 Chin. Phys. Lett. 30 038503 |
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Abstract Ni silicide thermal stability is improved by the use of a Ni-V (nickel vanadium) alloy target. The relationship between the formation temperature and the thermal stability of Ni silicide is investigated. The sheet resistance after the formation of Ni silicide with the Ni-V shows stable characteristics up to a rapid-thermal-process temperature of 700°C, while degradation of sheet resistance starts at that temperature in the case of pure-Ni. Moreover, the thermal stability improvement is demonstrated by the post-silicidation annealing. It is considered that the thermal robustness of Ni-V silicide is highly dependent on the formation temperature. With the increasing silicidation temperature (around 700°C), more thermally stable Ni silicide is formed in comparison to the low-temperature case using the Ni-V. A Ni-V alloy target is utilized to form Ni silicide. The V and the V-trap complexes are explained to block the transformation from NiSi to NiSi2 so as to improve the Ni silicide thermal stability.
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Received: 06 November 2012
Published: 29 March 2013
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