| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application |
| CHANG Hu-Dong1, LIU Gui-Ming1, SUN Bing1, ZHAO Wei1, WANG Wen-Xin2, LIU Hong-Gang1** |
1Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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| Cite this article: |
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CHANG Hu-Dong, LIU Gui-Ming, SUN Bing et al 2013 Chin. Phys. Lett. 30 037303 |
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Abstract We demonstrate a high performance implant-free n-type In0.7Ga0.3As channel MOSFET with a 4-nm InP barrier layer fabricated on a semi-insulating substrate employing a 10-nm Al2O3 as gate dielectric. The maximum effective channel mobility is 1862 cm2/V?s extracted by the split C–V method. Devices with 0.8 μm gate length exhibit a peak extrinsic transconductance of 85 mS/mm and a drive current of more than 200 mA/mm. A short-circuit current gain cutoff frequency fT of 24.5 GHz and a maximum oscillation frequency fmax of 54 GHz are achieved for the 0.8 μm gate-length device. The research is helpful to obtain higher performance In0.7Ga0.3As MOSFETs for radio-frequency applications.
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Received: 30 September 2012
Published: 29 March 2013
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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71.61.Ey
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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