Chin. Phys. Lett.  2013, Vol. 30 Issue (2): 028101    DOI: 10.1088/0256-307X/30/2/028101
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD
XU Pei-Qiang, JIANG Yang**, MA Zi-Guang, DENG Zhen, LU Tai-Ping, DU Chun-Hua, FANG Yu-Tao, ZUO Peng, CHEN Hong
Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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XU Pei-Qiang, JIANG Yang, MA Zi-Guang et al  2013 Chin. Phys. Lett. 30 028101
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Abstract GaN films with different thicknesses of Al composition graded AlGaN buffer are grown on substrates of Si(111) by metal-organic chemical vapor deposition (MOCVD). The thicknesses of graded AlGaN buffer are fixed at 200 nm, 300 nm, and 450 nm, respectively. Optical microscopy, atomic force microscopy, x-ray diffraction, and Raman spectroscopy are employed to characterize these samples. We find that the thickness of the graded AlGaN buffer layer plays a key role on the following growth of GaN films. The optimized thickness of the graded AlGaN buffer layer is 300 nm. Under such conditions, the GaN epitaxial film is crack-free, and its dislocation density is the lowest.
Received: 15 October 2012      Published: 02 March 2013
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.05.Ea (III-V semiconductors)  
  71.20.Nr (Semiconductor compounds)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/30/2/028101       OR      https://cpl.iphy.ac.cn/Y2013/V30/I2/028101
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XU Pei-Qiang
JIANG Yang
MA Zi-Guang
DENG Zhen
LU Tai-Ping
DU Chun-Hua
FANG Yu-Tao
ZUO Peng
CHEN Hong
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