| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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P-type ZnO:N Films Prepared by Thermal Oxidation of Zn3N2 |
| ZHANG Bin1,2**, LI Min1,2,3, WANG Jian-Zhong1,2, SHI Li-Qun1,2 |
1Applied Ion Beam Physics Laboratory (Key Laboratory of the Ministry of Education), Institute of Modern Physics, Fudan University, Shanghai 200433
2Department of Nuclear Science and Technology, Fudan University, Shanghai 200433
3Alternative Energy and Power Generation Technology Institute, Dongfang Electric Corporation Central Academy, Chengdu 611731
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ZHANG Bin, LI Min, WANG Jian-Zhong et al 2013 Chin. Phys. Lett. 30 027303 |
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Abstract We prepare p-type ZnO:N films by annealing Zn3N2 films in oxygen over a range of temperatures. The prepared films are characterized by various techniques, such as Rutherford backscattering spectroscopy, x-ray diffraction, x-ray photoemission spectroscopy, the Hall effect and photoluminescence spectra. The results show that the Zn3N2 films start to transform to ZnO at 300°C and the N content decreases with an increase in annealing temperature. N has two local chemical states: zinc oxynitride (ZnO1?xNx) and substitutional NO in O-rich local environments (α -NO). The conduction type changes from n-type to p-type upon oxidation at 400–600°C, indicating that N is an effective acceptor in the ZnO film. The photoluminescence spectra show the UV emission and defect-related emissions of ZnO:N films. The mechanism and efficiency of p-type doping are briefly discussed.
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Received: 30 November 2012
Published: 02 March 2013
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