| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Impact of Au Nanocrystal Size and Inter-Nanocrystal Distance on the Storage Characteristics of Memory Devices |
| LAN Xue-Xin1, OU Xin2, XU Bo2, GONG Chang-Jie1, LI Run1, YIN Qiao-Nan2, XIA Yi-Dong2, YIN Jiang2**, LIU Zhi-Guo2, LI Ai-Dong2, YAN Feng3 |
1National Laboratory of Solid State Microstructures, and Department of Physics, Nanjing University, Nanjing 210093
2National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093
3School of Electronics Science and Engineering, Nanjing University, Nanjing 210093
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| Cite this article: |
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LAN Xue-Xin, OU Xin, XU Bo et al 2013 Chin. Phys. Lett. 30 128102 |
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Abstract The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals (NCs) sandwiched by Al2O3 tunneling and blocking layers are studied. A strong impact of both Au NC size and inter-NC distance on the charge trapping capability of the devices is observed. The total surface area of Au NCs associated with Au NC size is supposed to be a key factor in the charge-storage capability, and the device with larger size of Au NCs and a suitable inter-NC distance will possess better charge trapping capability. Variable range hopping as the lateral charge loss mechanism is considered as the main reason for the decrease of the charge trapping capability when Au NCs grow and overlap neighbors.
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Received: 16 October 2013
Published: 13 December 2013
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| PACS: |
81.07.Bc
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(Nanocrystalline materials)
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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Abstract
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