| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System |
| LIU Bin1, SUN Guo-Sheng1,2, LIU Xing-Fang1**, ZHANG Feng1, DONG Lin1, ZHENG Liu1, YAN Guo-Guo1, LIU Sheng-Bei1, ZHAO Wan-Shun1, WANG Lei1, ZENG Yi-Ping1, LI Xi-Guang2, WANG Zhan-Guo1, YANG Fei3 |
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Dongguan Tianyu Semiconductor, Inc., Dongguan 523000
3State Grid Smart Grid Research Institute, Beijing 100192
|
|
| Cite this article: |
|
LIU Bin, SUN Guo-Sheng, LIU Xing-Fang et al 2013 Chin. Phys. Lett. 30 128101 |
|
|
|
|
Abstract Homoepitaxial growth of 4H-SiC epilayers is conducted in a SiH4-C2H4-H2 system by low pressure hot-wall vertical chemical vapor deposition (CVD). Thick epilayers of 45 μm are achieved at a high growth rate up to 26 μm/h under an optimized growth condition, and are characterized by using a Normaski optical microscope, a scanning electronic microscope (SEM), an atomic force microscope (AFM) and an x-ray diffractometer (XRD), indicating good crystalline quality with mirror-like smooth surfaces and an rms roughness of 0.9 nm in a 5 μm × 5μm area. The dependence of the 4H-SiC growth rate on growth conditions on 4° off-axis 4H-SiC substrates and its mechanism are investigated. It is found that the H2 flow rate could influence the surface roughness, while good surface morphologies without Si droplets and epitaxial defects such as triangular defects could be obtained by increasing temperature.
|
|
|
Received: 10 September 2013
Published: 13 December 2013
|
|
| PACS: |
81.10.Aj
|
(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
81.05.Hd
|
(Other semiconductors)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
