| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering |
| LIU Ao1,2, LIU Guo-Xia1,2, SHAN Fu-Kai1,2,3**, ZHU Hui-Hui1,2, B. C. Shin3**, W. J. Lee3, C. R. Cho4 |
1College of Physics Science, Qingdao University, Qingdao 266071
2Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071
3Electronic Ceramics Center, DongEui University, Busan 614714, South Korea
4College of Nanoscience and Nanotechnology, Pusan National University, Busan 609735, South Korea
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| Cite this article: |
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LIU Ao, LIU Guo-Xia, SHAN Fu-Kai et al 2013 Chin. Phys. Lett. 30 127301 |
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Abstract InTiZnO thin-film transistors (ITZO TFTs) with Al2O3 gate dielectrics are fabricated by magnetron sputtering at room temperature. The bottom-gate-type ITZO TFTs with amorphous Al2O3 gate dielectrics are operated in the enhancement mode and exhibit a mobility of 50.4 cm2/V?s, threshold voltage of 1.2 V, subthreshold swing of 94.5 mV/decade, and on/off-current ratio of 7×106. We believe that ITZO deposited at room temperature is an appropriate semiconductor material to produce high-mobility TFTs for developing flexible electronic devices.
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Received: 15 April 2013
Published: 13 December 2013
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| PACS: |
73.61.Ng
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(Insulators)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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78.40.Fy
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(Semiconductors)
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