| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient |
| HA Wei, ZHANG Jin-Cheng**, ZHAO Sheng-Lei, GE Sha-Sha, WEN Hui-Juan, ZHANG Chun-Fu, MA Xiao-Hua, HAO Yue |
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
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| Cite this article: |
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HA Wei, ZHANG Jin-Cheng, ZHAO Sheng-Lei et al 2013 Chin. Phys. Lett. 30 127201 |
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Abstract The conventional AlGaN/GaN high electron mobility transistor (HEMT), the AlGaN/GaN/AlGaN HEMT, and the AlxGa1?xN/AlyGa1?yN HEMT are fabricated on sapphire substrates to study the drain-induced barrier-lowering (DIBL) effect. It is found that the AlxGa1?xN/AlyGa1?yN HEMT with AlGaN channel has the lowest DIBL coefficient of 6.7 mV/V compared with the other two HEMTs. This is attributed to the best two-dimensional electron gas confinement of the AlxGa1?xN/AlyGa1?yN structure. This opinion is further confirmed by the conduction band diagrams and electron distribution calculated from the one-dimensional Poisson–Schr?dinger equation.
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Received: 22 May 2013
Published: 13 December 2013
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| PACS: |
72.80.Ey
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(III-V and II-VI semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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