| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Transistor with T-Dual Dielectric Buried Layers |
| WU Li-Juan1,2**, ZHANG Wen-Tong2, ZHANG Bo2, LI Zhao-Ji2 |
1College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225
2State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
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| Cite this article: |
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WU Li-Juan, ZHANG Wen-Tong, ZHANG Bo et al 2013 Chin. Phys. Lett. 30 127102 |
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Abstract A novel silicon-on-insulator (SOI) high-voltage device of super-junction (SJ) lateral-double-diffused metal-oxide-semiconductor transistors (LDMOSTs) with T-dual dielectric buried layers (T-DBLs) is presented. The T-DBLs are formed by the first T-shaped dielectric layer and the second dielectric layer. A lot of holes are accumulated on the top interface of the second dielectric layer, which compensates for the charge imbalance of the surface N and P pillars, thus the substrate-assisted depletion (SAD) effect is eliminated in the new device. The electric field of the second dielectric buried layer, EI2, is enhanced by the interface charges, and the breakdown voltage Vbreakdown is increased. EI2=515 V/μm is obtained in the T-DBL SOI SJ. The Vbreakdown of the new device is increased from 124 V of the conventional SOI SJ to 302 V with a 15 μm length drift region. The specific on-resistance (Ron, sp) of the T-DBL SOI SJ is only 0.00865 Ω?cm2 and the FOM (FOM = V2breakdown/Ron, sp) is 10.54 MW/cm2.
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Received: 11 July 2013
Published: 13 December 2013
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| PACS: |
71.10.-w
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(Theories and models of many-electron systems)
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73.20.-r
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(Electron states at surfaces and interfaces)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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77.22.Jp
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(Dielectric breakdown and space-charge effects)
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Abstract
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