| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Dynamic Control of Tunneling Conductance in Ferroelectric Tunnel Junctions |
| ZOU Ya-Yi1,2, CHEW Khian-Hooi3, ZHOU Yan1,4** |
1Department of Physics, University of Hong Kong, Hong Kong
2Department of Physics, Peking University, Beijing 100871
3Centre for Theoretical and Computational Physics, Department of Physics, University of Malaya, 50480 Kuala Lumpur, Malaysia
4Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong
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| Cite this article: |
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ZOU Ya-Yi, CHEW Khian-Hooi, ZHOU Yan 2013 Chin. Phys. Lett. 30 107701 |
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Abstract We investigate the dynamic characteristics of electric polarization P(t) in a ferroelectric junction under ac applied voltage and stress, and calculate the frequency response and the cut-off frequency f0, which provides a reference for the upper limit of the working frequency. Our study might be significant for sensor and memory applications of nanodevices based on ferroelectric junctions.
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Received: 19 July 2013
Published: 21 November 2013
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| PACS: |
77.55.Nv
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(Multiferroic/magnetoelectric films)
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77.22.Ej
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(Polarization and depolarization)
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77.90.+k
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(Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties)
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