| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Surface Oxidation Properties in a Topological Insulator Bi2Te3 Film |
| GUO Jian-Hua, QIU Feng, ZHANG Yun, DENG Hui-Yong**, HU Gu-Jin, LI Xiao-Nan, YU Guo-Lin, DAI Ning** |
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
|
|
| Cite this article: |
|
GUO Jian-Hua, QIU Feng, ZHANG Yun et al 2013 Chin. Phys. Lett. 30 106801 |
|
|
|
|
Abstract Bi2Te3 films are grown on (111)-oriented GaAs substrates by using the hot wall epitaxy method and the surface oxidation properties in the films are investigated by x-ray photoelectron spectroscopy, Raman spectroscopy, and x-ray diffraction. The results show that the films are c-axis oriented. Two pairs of new peaks in the XPS spectra involved with the binding energies from Bi 4f and Te 3d electrons correspond to Bi–O–Te bonds. Besides the A1g1, Eg2 andA1g2 vibration modes from Bi2Te3 films, two new peaks at 93.5 cm?1 and 123 cm?1 are observed in Raman spectra, which are assigned to α-Bi2O3 and TeO2, respectively. Our results are helpful for analyzing the degradation mechanism of topological surface states in Bi2Te3.
|
|
|
Received: 10 April 2013
Published: 21 November 2013
|
|
| PACS: |
68.47.Fg
|
(Semiconductor surfaces)
|
| |
81.15.Ef
|
|
| |
82.80.Pv
|
(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
|
|
|
|
|
|
[1] Cho S, Kim Y, DiVenere A, Wong G K, Ketterson J B and Meyer J R 1999 Appl. Phys. Lett. 75 1401
[2] Venkatasubramanian R, Colpitts T, Watko E, Lamvik M and E1-Masry N 1997 J. Cryst. Growth 170 817
[3] Ferhat M, Liautard B, Brun G, Tedenac J C, Nouaoura M and Lassabatere L 1996 J. Cryst. Growth 167 122
[4] Boikov Y A, Gribanova O S, Danilov V A and Kutasov A 1990 Sov. Phys. Solid State 32 2056
[5] Jiang J, Li Y L, Xu G J, Cui P, Wu T, Chen L D and Wang G 2007 Acta Phys. Sin. 56 2858 (in Chinese)
[6] Zhang H J, Liu C X, Qi X L, Dai X, Fang Z and Zhang S C 2009 Nat. Phys. 5 438
[7] Chen Y L, Analytis J G, Chu J H, Liu Z K, Mo S K, Qi X L, Zhang H J, Lu D H, Dai X, Fang Z, Zhang S C, Fisher I R, Hussain Z and Shen Z X 2009 Science 325 178
[8] Li Y Y, Wang G, Zhu X G, Liu M H, Ye C, Chen X, Wang Y Y, He K, Wang L L, Ma X C, Zhang H J, Dai X, Fang Z, Xie X C, Liu Y, Qi X L, Jia J F, Zhang S C and Xue Q K 2010 Adv. Mater. 22 4002
[9] Bando H, Koizumi K, Oikawa Y, Daikohara K, Kulbachinskii V A and Ozaki H 2000 J. Phys.: Condens. Matter 12 5607
[10] Debies T P and Rabalais J W 1977 Chem. Phys. 20 277
[11] Chowdari B V R and Kumari P P 1996 J. Non-Cryst. Solids 197 31
[12] Li Q H, Gu D H and Gan F X 2004 Chin. Phys. Lett. 21 320
[13] Shahil K M F, Hossain M Z, Teweldebrhan D and Balandin A A 2010 Appl. Phys. Lett. 96 153103
[14] Richter W, Kouhler H and Becker C R 1977 Phys. Status Solidi B 84 619
[15] Zhao Y M, Hughes R W, Su Z X, Zhou W Z and Gregory D H 2011 Angew. Chem. Int. Ed. 50 10397
[16] Betsch R J and White W B 1978 Spectrochim. Acta 34 505
[17] Pine A S and Dresselhaus G 1972 Phys. Rev. B 5 4087 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
