| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer |
| WEN Xiao-Xia1, YANG Xiao-Dong1, HE Miao1**, LI Yang2**, WANG Geng1, LU Ping-Yuan1, QIAN Wei-Ning1, LI Yun1, ZHANG Wei-Wei1, WU Wen-Bo1, CHEN Fang-Sheng1, DING Li-Zhen1 |
1Laboratory of Micro-nano Photonic Functional Materials and Devices of Guangdong Province, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631
2The School of Chemistry, The University of St. Andrews, Fife KY169S, U.K. |
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| Cite this article: |
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WEN Xiao-Xia, YANG Xiao-Dong, HE Miao et al 2012 Chin. Phys. Lett. 29 097304 |
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Abstract GaN-based light-emitting devices (LEDs) with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program. It is found that the structure with an AlInN electron blocking layer shows improved light output power, lower current leakage and efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly accounted for by efficient electron blocking. It can be concluded that Auger recombination is responsible for the dominant origin of the efficiency droop of a GaN-based LED as current increases.
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Received: 01 April 2012
Published: 01 October 2012
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.61.Ey
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(III-V semiconductors)
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78.66.Fd
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(III-V semiconductors)
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73.21.Fg
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(Quantum wells)
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