| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors |
| QIANG Lei, YAO Ruo-He** |
| School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640 |
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| Cite this article: |
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QIANG Lei, YAO Ruo-He 2012 Chin. Phys. Lett. 29 097301 |
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Abstract Based on the differential Ohm's law and Poisson's equation, an analytical model of the drain current for a-Si:H thin-film transistors is developed. This model is proposed to elaborate the temperature effect on the drain current, which indicates that the drain current is linear with temperature in the range of 290–360 K, and the results fit well with the experimental data.
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Received: 02 May 2012
Published: 01 October 2012
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| PACS: |
73.61.-r
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(Electrical properties of specific thin films)
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71.23.An
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(Theories and models; localized states)
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68.60.Dv
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(Thermal stability; thermal effects)
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