| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation |
| MAO Xue**, HAN Pei-De, HU Shao-Xu, GAO Li-Peng, LI Xin-Yi, MI Yan-Hong, LIANG Peng |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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MAO Xue, HAN Pei-De, HU Shao-Xu et al 2012 Chin. Phys. Lett. 29 097101 |
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Abstract Optical and electrical properties of single-crystal Si supersaturated with Se by ion implantation and followed by different thermal annealing conditions are reported. Si is implanted with 1×1016 cm?2 Se ions at 100 keV. The total substitutional fraction of Se atoms in Si is 45% under the annealing at 800°C for 30 min and the peak concentration of substitutional Se atoms is exceeded 1×1020 cm?3. A temperature-independent carrier concentration of 3×1019 cm?3 is measured and the near-infrared absorption is closed to 30%. These results indicate the insulator-to-metal transition of the doped layer and the formation of impurity bands in the Si band gap.
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Received: 24 February 2012
Published: 01 October 2012
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| PACS: |
71.30.+h
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(Metal-insulator transitions and other electronic transitions)
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81.05.Cy
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(Elemental semiconductors)
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78.66.Db
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(Elemental semiconductors and insulators)
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