| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a-GaN Films Grown on r-Plane Sapphire Substrates by MOCVD |
| TIAN Yu1,2, DAI Jiang-Nan1, XIONG Hui1, ZHENG Guang2, RYU My3, FANG Yan-Yan1, CHEN Chang-Qing1** |
1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074
2Department of Physics, Jianghan University, Wuhan 430056
3Department of Physics, Kangwon National University, Kangwon-do 200-701, Republic of Korea |
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Abstract We investigate the effects of the V/III ratio of a low-temperature GaN buffer layer on the growth of the overlaying nonpolar -plane GaN film grown on -plane sapphire by metal-organic chemical-vapor deposition (MOCVD). With other experimental conditions keeping fixed, the low-temperature GaN buffer layers are grown under various V/III ratios of 1000, 3000, 6000 and 9000, respectively. The characteristics of the -plane GaN films are analyzed by scanning electron microscopy, high resolution x-ray diffraction, Raman spectrum, and low temperature photoluminescence. The results show that the V/III ratio of the buffer layer has significant effects on the crystal quality of the a-plane GaN film, and a V/III ratio of 6000 is found to be the most suitable condition to achieve pit-free flat GaN surface.
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Received: 16 January 2012
Published: 31 July 2012
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.55.Cr
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(III-V semiconductors)
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