| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric Films |
| ZHU Yan-Yan1,2, FANG Ze-Bo1**, TAN Yong-Sheng1 |
1Department of Physics, Shaoxing University, Shaoxing 312000
2Department of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090 |
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Abstract Ultrathin high-k dielectric ErAlO films were deposited on Si (100) substrates by using radio-frequency magnetron sputtering. The very flat surface of the annealed film with a rms roughness less than 0.25 nm was observed by using an atomic force microscope. The film shows good thermal stability when annealing at 900°C for 30 s in the O2 ambient. The effective dielectric constant of the film is around 15.2, and a low leakage current of 8.4×10?5 A/cm2 at an electric field of 1 MV/cm was achieved for the film with the equivalent oxide thickness of 2.0 nm after annealing.
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Received: 01 March 2012
Published: 31 July 2012
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