| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Determination of Channel Temperature in AlGaN/GaN HEMTs by Pulsed I–V Characteristics |
| WANG Jian-Hui, WANG Xin-Hua, PANG Lei, CHEN Xiao-Juan, JIN Zhi, LIU Xin-Yu** |
| Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 |
|
| Cite this article: |
|
|
|
|
|
|
Abstract Electrical determination of the channel temperature used for AlGaN/GaN high-electron-mobility transistors (HEMTs) is proposed. The measurement is based on the pulse technique that superposes a detecting pulse on the quiescent bias to acquire the electrical response under various thermal conditions. Practical experiments and electro-thermal simulations manifest that the duration of the pulse used has a fairly slight influence in the measured results. Finally, noticeable variance of thermal resistance at different gate biases is reported and the thermal resistance as a function of gate voltage decreases from 18.6 to 12.3°C?mm/W as the gate bias increases from ?1 V to 2 V under low power density condition.
|
|
|
Received: 14 February 2012
Published: 31 July 2012
|
|
|
|
|
|
|
|
[1] Mishra U K, Parikh P and Wu Y F 2002 Proc. IEEE 90 1022
[2] Gaska R, Osinsky A, Yang J W and Shur M S 1998 IEEE Electron. Device Lett. 19 89
[3] Blackburn D L 2004 20th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (San Jose, CA 09–11 March 2004) 20 70
[4] A Sarua, J Hangfeng, M Kuball, M J Uren, T Martin, K P Hilton and R S Balmer 2006 IEEE Trans. Electron Devices 53 2438
[5] Kuzmik J, Javorka R, Alam A, Marso M, Heuken M and Kordos P 2002 I EEE Trans. Electron Devices 49 1496
[6] McAlister S P, Bardwell J A, Haffouz S and Tang H 2006 J. Vacuum Sci. Technol. A: Vacuum, Surfaces, and Films 24 624
[7] Zhang G C, Feng S W, Hu P F, Zhao Y, Guo C S, Xu Yang, Chen T S and Jiang Y J 2011 Chin. Phys. Lett. 28 017201
[8] Joh J, del Alamo J A, Chowdhury U, Chou T M, Tserng H Q and Jimenez J L 2009 IEEE Trans. Electron Devices 56 2895
[9] Scott J, Rathmell J G, Parker A and Sayed M 1996 IEEE Trans. Microwave Theory Technol. 44 2718
[10] Augaudy S, Quere R, Teyssier J P, Di Forte-Poisson M A, Cassette S, Dessertenne B and Delage S L 2001 IEEE MTT-S Int. Digest Microwave Symposium 1 427
[11] Chang Y C, Zhang Y M, Zhang Y M and Tong K Y 2006 J. Appl. Phys. 99 044501
[12] Chen X L, Lan Y C, Liang J K, Cheng X R, Xu Y P, Xu T, Jiang P Z and Lu K Q 1999 Chin. Phys. Lett. 16 107
[13] Aubry R, Jacquet J C, Weaver J, Durand O, Dobson P, Mills G, di Forte-Poisson M A, Cassette S and Delage S L 2007 IEEE Trans. Electron Devices 54 385
[14] Heller E R and Crespo A 2008 Microelectron. Reliab. 48 45
[15] Killat N, Kuball M, Chou T, Chowdhury U and Jimenez J 2010 IEEE Int. Reliability Phys. Symposium (IRPS) p 528 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
